Array substrate and display apparatus

ABSTRACT

An array substrate is provided. The array substrate includes a node connecting line in a same layer as a respective voltage supply line, connected to a first capacitor electrode and a semiconductor material layer. An orthographic projection of a first anode on a base substrate at least partially overlaps with an orthographic projection of a node connecting line in a respective first subpixel. An orthographic projection of a second anode on the base substrate at least partially overlaps with an orthographic projection of the node connecting line in a respective second subpixel. An orthographic projection of a third anode on the base substrate at least partially overlaps with an orthographic projection of the node connecting line in a respective third subpixel. An orthographic projection of a fourth anode on the base substrate at least partially overlaps with an orthographic projection of the node connecting line in a respective fourth subpixel.

TECHNICAL FIELD

The present invention relates to display technology, more particularly,to an array substrate and a display apparatus.

BACKGROUND

Organic Light Emitting Diode (OLED) display is one of the hotspots inthe field of flat panel display research today. Unlike Thin FilmTransistor-Liquid Crystal Display (TFT-LCD), which uses a stable voltageto control brightness, OLED is driven by a driving current required tobe kept constant to control illumination. The OLED display panelincludes a plurality of pixel units configured with pixel-drivingcircuits arranged in multiple rows and columns. Each pixel-drivingcircuit includes a driving transistor having a gate terminal connectedto one gate line per row and a drain terminal connected to one data lineper column. When the row in which the pixel unit is gated is turned on,the switching transistor connected to the driving transistor is turnedon, and the data voltage is applied from the data line to the drivingtransistor via the switching transistor, so that the driving transistoroutputs a current corresponding to the data voltage to an OLED device.The OLED device is driven to emit light of a corresponding brightness.

SUMMARY

In one aspect, the present disclosure provides an array substrate,comprising a plurality of light emitting elements respectively in aplurality of subpixels; and a plurality of pixel driving circuitsrespectively in the plurality of subpixels configured to respectivelydrive the plurality of light emitting elements; wherein the plurality oflight emitting elements comprise a first light emitting element in arespective first subpixel, a second light emitting element in arespective second subpixel, a third light emitting element in arespective third subpixel, and a fourth light emitting element in arespective fourth subpixel; wherein a respective one of the plurality ofpixel driving circuits comprises a plurality of transistors, and astorage capacitor comprising a first capacitor electrode, a secondcapacitor electrode electrically connected to a respective voltagesupply line, and an insulating layer between the first capacitorelectrode and the second capacitor electrode; wherein the arraysubstrate comprises a base substrate; a semiconductor material layer onthe base substrate; and a node connecting line in a same layer as therespective voltage supply line, connected to the first capacitorelectrode through a first main via, and connected to the semiconductormaterial layer through a second main via; wherein an orthographicprojection of a first anode of the first light emitting element in therespective first subpixel on the base substrate at least partiallyoverlaps with an orthographic projection of a node connecting line inthe respective first subpixel on the base substrate; an orthographicprojection of a second anode of the second light emitting element in therespective second subpixel on the base substrate at least partiallyoverlaps with an orthographic projection of the node connecting line inthe respective second subpixel on the base substrate; an orthographicprojection of a third anode of the third light emitting element in therespective third subpixel on the base substrate at least partiallyoverlaps with an orthographic projection of the node connecting line inthe respective third subpixel on the base substrate; and an orthographicprojection of a fourth anode of the fourth light emitting element in therespective fourth subpixel on the base substrate at least partiallyoverlaps with an orthographic projection of the node connecting line inthe respective fourth subpixel on the base substrate.

Optionally, the plurality of transistors comprises a driving transistor;the orthographic projection of the first anode in the respective firstsubpixel on the base substrate covers an orthographic projection of aportion of the node connecting line at a position connecting to a firstcapacitor electrode in the respective first subpixel on the basesubstrate; the orthographic projection of the second anode in therespective second subpixel on the base substrate covers an orthographicprojection of a portion of the node connecting line at a positionconnecting to a first capacitor electrode in the respective secondsubpixel on the base substrate; the orthographic projection of the thirdanode in the respective third subpixel on the base substrate covers anorthographic projection of a portion of the node connecting line at aposition connecting to a first capacitor electrode in the respectivethird subpixel on the base substrate; and the orthographic projection ofthe fourth anode in the respective fourth subpixel on the base substratecovers an orthographic projection of a portion of the node connectingline at a position connecting to a first capacitor electrode in therespective fourth subpixel on the base substrate.

Optionally, the orthographic projection of the third anode on the basesubstrate at least partially overlaps with an orthographic projection ofa third transistor in the respective third subpixel on the basesubstrate and at least partially overlaps with an orthographicprojection of a third transistor in the respective fourth subpixeladjacent to the respective third subpixel on the base substrate.

Optionally, the orthographic projection of the third anode on the basesubstrate covers an orthographic projection of a source electrode of athird transistor in the respective third subpixel on the base substrate,partially overlaps with an orthographic projection of an active layer ofthe third transistor in the respective third subpixel on the basesubstrate, and partially overlaps with an orthographic projection of anactive layer of the third transistor in the respective fourth subpixelon the base substrate.

Optionally, the orthographic projection of the first anode on the basesubstrate at least partially overlaps with an orthographic projection ofa third transistor in the respective first subpixel on the basesubstrate.

Optionally, the orthographic projection of the first anode on the basesubstrate partially overlaps with an orthographic projection of a sourceelectrode of the third transistor in the respective first subpixel onthe base substrate, and partially overlaps with an orthographicprojection of an active layer of the third transistor in the respectivefirst subpixel on the base substrate.

Optionally, the orthographic projection of the fourth anode on the basesubstrate at least partially overlaps with an orthographic projection ofa third transistor in the respective second subpixel on the basesubstrate.

Optionally, the orthographic projection of the fourth anode on the basesubstrate partially overlaps with an orthographic projection of a sourceelectrode of the third transistor in the respective second subpixel onthe base substrate, and partially overlaps with an orthographicprojection of an active layer of the third transistor in the respectivesecond subpixel on the base substrate.

Optionally, the array substrate further comprises a gate insulatinglayer on a side of the semiconductor material layer away from the basesubstrate; an insulating layer on a side of the gate insulating layeraway from the base substrate; an inter-layer dielectric layer on a sideof the insulating layer away from the gate insulating layer; a relayelectrode layer on a side of the inter-layer dielectric layer away fromthe insulating layer; a first planarization layer on a side of the relayelectrode layer away from the inter-layer dielectric layer; an anodecontact pad layer on a side of the first planarization layer away fromthe inter-layer dielectric layer; a second planarization layer on sideof the anode contact pad layer away from the first planarization layer;and a pixel definition layer on a side of the second planarization layeraway from the base substrate, the pixel definition layer definingsubpixel apertures; wherein respective anodes are on a side of thesecond planarization layer away from the first planarization layer; andrespective light emitting layers are on a side of the respective anodesaway from the second planarization layer; wherein, in the respectivefirst subpixel, the first anode is connected to a first anode contactpad through a first via extending through the second planarizationlayer, the first anode contact pad is connected to a first relayelectrode through a second via extending through the first planarizationlayer, and the first relay electrode is connected to a drain electrodeof a fifth transistor in the respective first subpixel through a thirdvia extending through the inter-layer dielectric layer, the insulatinglayer, and the gate insulating layer; in the respective second subpixel,the second anode is connected to a second anode contact pad through afourth via extending through the second planarization layer, the secondanode contact pad is connected to a second relay electrode through afifth via extending through the first planarization layer, and thesecond relay electrode is connected to a drain electrode of the fifthtransistor in the respective second subpixel through a sixth viaextending through the inter-layer dielectric layer, the insulatinglayer, and the gate insulating layer; in the respective third subpixel,the third anode is connected to a third anode contact pad through aseventh via extending through the second planarization layer, the thirdanode contact pad is connected to a third relay electrode through aneighth via extending through the first planarization layer, and thethird relay electrode is connected to a drain electrode of the fifthtransistor in the respective third subpixel through a ninth viaextending through the inter-layer dielectric layer, the insulatinglayer, and the gate insulating layer; and in a respective fourthsubpixel, the fourth anode is connected to a fourth anode contact padthrough a tenth via extending through the second planarization layer,the fourth anode contact pad is connected to a fourth relay electrodethrough an eleventh via extending through the first planarization layer,and the fourth relay electrode is connected to a drain electrode of thefifth transistor in the respective fourth subpixel through a twelfth viaextending through the inter-layer dielectric layer, the insulatinglayer, and the gate insulating layer.

Optionally, an orthographic projection of a portion of the first anodecontact pad in the second via on the base substrate is substantiallynon-overlapping with an orthographic projection of a portion of thefirst anode in the first via on the base substrate, and is substantiallynon-overlapping with an orthographic projection of a portion of thefirst relay electrode in the third via on the base substrate; anorthographic projection of a portion of the second anode contact pad inthe fifth via on the base substrate is substantially non-overlappingwith an orthographic projection of a portion of the second anode in thefourth via on the base substrate, and is substantially non-overlappingwith an orthographic projection of a portion of the second relayelectrode in the sixth via on the base substrate; an orthographicprojection of a portion of the third anode contact pad in the eighth viaon the base substrate is substantially non-overlapping with anorthographic projection of a portion of the third anode in the seventhvia on the base substrate, and is substantially non-overlapping with anorthographic projection of a portion of the third relay electrode in theninth via on the base substrate; and an orthographic projection of aportion of the fourth anode contact pad in the eleventh via on the basesubstrate is substantially non-overlapping with an orthographicprojection of a portion of the fourth anode in the tenth via on the basesubstrate, and is substantially non-overlapping with an orthographicprojection of a portion of the fourth relay electrode in the twelfth viaon the base substrate.

Optionally, counter-clock wise or clock wise, a respective third anodeis adjacent to a first respective fourth anode, a first respective firstanode, a first respective second anode, a second respective first anode,a second respective fourth anode, a second respective second anode, anda third respective first anode; a shortest distance between therespective third anode and any one of the first respective fourth anode,the first respective first anode, the first respective second anode, thesecond respective first anode, a virtual line passing through co-linearedges respectively from the second respective fourth anode and thesecond respective second anode, or the third respective first anode isin a range of 2.0 μm to 22 μm; and a shortest distance between therespective third anode and the first respective fourth anode is lessthan a shortest distance between the respective third anode and thethird respective first anode, less than a shortest distance between therespective third anode and the first respective first anode, less than ashortest distance between the respective third anode and the secondrespective first anode, less than a shortest distance between therespective third anode and a virtual line passing through co-linearedges respectively from the second respective fourth anode and thesecond respective second anode, and less than a shortest distancebetween the respective third anode and the first respective secondanode.

Optionally, the shortest distance between the respective third anode andthe first respective fourth anode is in a range of 2.0 μm to 5.0 μm; theshortest distance between the respective third anode and the firstrespective first anode is in a range of 8.0 μm to 20.0 μm; the shortestdistance between the respective third anode and the first respectivesecond anode is in a range of 5.0 μm to 15.0 μm; the shortest distancebetween the respective third anode and the second respective first anodeis in a range of 7.0 μm to 17.0 μm; the shortest distance between therespective third anode and the virtual line passing through co-linearedges respectively from the second respective fourth anode and thesecond respective second anode is in a range of 5.0 μm to 16.0 μm; andthe shortest distance between the respective third anode and the thirdrespective first anode is in a range of 9.0 μm to 22.0 μm.

Optionally, counter-clock wise or clock wise, a respective first anodeis adjacent to a first respective second anode, a first respectivefourth anode, a first respective third anode, a second respective secondanode, a second respective third anode, a second respective fourthanode, and a third respective third anode; a shortest distance betweenthe respective first anode and any one of the first respective secondanode, the first respective fourth anode, the first respective thirdanode, the second respective second anode, the second respective thirdanode, the second respective fourth anode, or the third respective thirdanode in in a range of 3.0 μm to 25 μm; and a shortest distance betweenthe respective first anode and the second respective fourth anode isless than a shortest distance between the respective first anode and thesecond respective second anode, less than a shortest distance betweenthe respective first anode and the first respective fourth anode, lessthan a shortest distance between the respective first anode and thefirst respective third anode, less than a shortest distance between therespective first anode and the second respective third anode, which isgreater than a shortest distance between the respective first anode andthe third respective third anode, and less than a shortest distancebetween the respective first anode and the first respective secondanode.

Optionally, the shortest distance between the respective first anode andthe first respective second anode is in a range of 3.0 μm to 14.0 μm;the shortest distance between the respective first anode and the firstrespective fourth anode is in a range of 10.0 μm to 24.0 μm; theshortest distance between the respective first anode and the firstrespective third anode is in a range of 9.0 μm to 21.0 μm; the shortestdistance between the respective first anode and the second respectivesecond anode is in a range of 11.0 μm to 25.0 μm; the shortest distancebetween the respective first anode and the second respective third anodeis in a range of 8.0 μm to 20.0 μm; the shortest distance between therespective first anode and the second respective fourth anode is in arange of 2.5 μm to 7.5 μm; and the shortest distance between therespective first anode and the third respective third anode is in arange of 7.0 μm to 16.0 μm.

Optionally, counter-clock wise or clock wise, a respective fourth anodeis adjacent to a respective second anode, a first respective thirdanode, a first respective first anode, a second respective third anode,and a second respective first anode; a shortest distance between therespective fourth anode and any one of the first respective first anode,the second respective third anode, or the second respective first anodeis in a range of 2.0 μm to 25.0 μm; and a shortest distance between therespective fourth anode and the second respective first anode is greaterthan a shortest distance between the respective fourth anode and thefirst respective first anode, and greater than a shortest distancebetween the respective fourth anode and the second respective thirdanode.

Optionally, a distance between the respective fourth anode and therespective second anode, and along a virtual line passing throughco-linear edges respectively from the respective fourth anode and therespective second anode, is in a range of 10.0 μm to 25.0 μm; a shortestdistance between the first respective third anode and a virtual linepassing through co-linear edges respectively from the respective fourthanode and the respective second anode is in a range of 6.0 μm to 15.0μm, a shortest distance between a protrusion portion of the firstrespective first anode that is closest to the respective fourth anode,and the virtual line passing through the co-linear edges respectivelyfrom the respective fourth anode and the respective second anode is in arange of 5.0 μm to 16.0 μm; the shortest distance between the respectivefourth anode and the first respective first anode is in a range of 2.5μm to 7.5 μm; the shortest distance between the respective fourth anodeand the second respective third anode is in a range of 2.0 μm to 5.0 μm;and the shortest distance between the respective fourth anode and thesecond respective first anode is in a range of 10.0 μm to 25.0 μm.

Optionally, the array substrate further comprises a first subpixelaperture, a second subpixel aperture, a third subpixel aperture, afourth subpixel aperture respectively extending through the pixeldefinition layer, wherein a first light emitting layer of the firstlight emitting element, a second light emitting layer of the secondlight emitting element, a third light emitting layer of the third lightemitting element, and a fourth light emitting layer of the fourth lightemitting element respectively connected to a first anode of the firstlight emitting element, a second anode of the second light emittingelement, a third anode of the third light emitting element, and a fourthanode of the fourth light emitting element, respectively through thefirst subpixel aperture, the second subpixel aperture, the thirdsubpixel aperture, the fourth subpixel aperture; wherein a shortestdistance between the first via and the first subpixel aperture is in arange of 9.0 μm to 15.0 μm; a shortest distance between the fourth viaand the second subpixel aperture is in a range of 2.0 μm to 6.0 μm; ashortest distance between the seventh via and the third subpixelaperture is in a range of 4.5 μm to 10.5 μm; and a shortest distancebetween the tenth via and the fourth subpixel aperture is in a range ofin a range of 2.0 μm to 6.0 μm.

Optionally, the orthographic projection of the first anode in therespective first subpixel on the base substrate at least partiallyoverlaps with an orthographic projection of the first capacitorelectrode in the respective first subpixel on the base substrate; theorthographic projection of the second anode in the respective secondsubpixel on the base substrate at least partially overlaps with anorthographic projection of the first capacitor electrode in therespective second subpixel on the base substrate; an orthographicprojection of the third anode in a respective third subpixel on the basesubstrate at least partially overlaps with an orthographic projection ofthe first capacitor electrode in the respective third subpixel on thebase substrate; and an orthographic projection of the fourth anode in arespective fourth subpixel on the base substrate at least partiallyoverlaps with an orthographic projection of the first capacitorelectrode in the respective fourth subpixel on the base substrate; theorthographic projection of the first anode in a respective firstsubpixel on the base substrate at least partially overlaps with anorthographic projection of the second capacitor electrode in therespective first subpixel on the base substrate; an orthographicprojection of the second anode in a respective second subpixel on thebase substrate at least partially overlaps with an orthographicprojection of the second capacitor electrode in the respective secondsubpixel on the base substrate; an orthographic projection of the thirdanode in a respective third subpixel on the base substrate at leastpartially overlaps with an orthographic projection of the secondcapacitor electrode in the respective third subpixel on the basesubstrate; and an orthographic projection of the fourth anode in arespective fourth subpixel sp4 on the base substrate at least partiallyoverlaps with an orthographic projection of the second capacitorelectrode in the respective fourth subpixel on the base substrate; andthe orthographic projection of the first anode in a respective firstsubpixel on the base substrate at least partially overlaps with anorthographic projection of the active layer of the driving transistor inthe respective first subpixel on the base substrate; an orthographicprojection of the second anode in a respective second subpixel on thebase substrate at least partially overlaps with an orthographicprojection of the active layer of the driving transistor in therespective second subpixel on the base substrate; an orthographicprojection of the third anode in a respective third subpixel on the basesubstrate at least partially overlaps with an orthographic projection ofthe active layer of the driving transistor in the respective thirdsubpixel on the base substrate; and an orthographic projection of thefourth anode in a respective fourth subpixel sp4 on the base substrateat least partially overlaps with an orthographic projection of theactive layer of the driving transistor in the respective fourth subpixelon the base substrate.

Optionally, the array substrate further comprises a spacer layer on aside of the pixel definition layer away from the base substrate; whereinthe spacer layer comprises first spacers arranged in a first array andsecond spacers arranged in a second array; the first array and thesecond array interlace with each other; a respective row of secondspacers in the second array is between two respective rows of firstspacers in the first array; a respective column of second spacers in thesecond array is between two respective columns of first spacers in thefirst array; a respective row of first spacers in the first array isbetween two respective rows of second spacers in the second array; arespective column of first spacers in the first array is between tworespective columns of second spacers in the second array; a respectiveone of the first spacers is between a second anode of the second lightemitting element and a third anode of the third light emitting element;and a respective one of the second spacers is between the third anodeand a fourth anode of the fourth light emitting element.

Optionally, two adjacent first spacers in the respective row of firstspacers are spaced apart by eight subpixels; two adjacent second spacersin the respective row of second spacers are spaced apart by eightsubpixels; two adjacent first spacers in the respective column of firstspacers are spaced apart by six subpixels; and two adjacent secondspacers in the respective column of second spacers are spaced apart bysix subpixels.

Optionally, the plurality of subpixels are arranged in an array of aplurality of rows along a first direction and a plurality of columnsalong a second direction; the respective row of first spacers is alongthe first direction; the respective row of second spacers is along thefirst direction; the respective column of first spacers is along thesecond direction; and the respective column of second spacers is alongthe second direction.

Optionally, the array substrate further comprises a first light emittinglayer on a side of a first anode of the first light emitting elementaway from the base substrate; a second light emitting layer on a side ofthe second anode away from the base substrate; a third light emittinglayer on a side of the third anode away from the base substrate; and afourth light emitting layer on a side of the fourth anode away from thebase substrate; wherein an orthographic projection of the third lightemitting layer on the base substrate partially overlaps with anorthographic projection of a respective first spacer on the basesubstrate; an orthographic projection of the second light emitting layeron the base substrate partially overlaps with the orthographicprojection of the respective first spacer on the base substrate; a firstedge of the third light emitting layer crossing over the respectivefirst spacer is substantially parallel to a first central line of therespective first spacer; and a second edge of the second light emittinglayer crossing over the respective first spacer is substantiallyparallel to the first central line of the respective first spacer.

Optionally, the first edge is spaced apart from the first central lineby a first distance along a direction perpendicular to the first centralline; the second edge is spaced apart from the first central line by asecond distance along the direction perpendicular to the first centralline; and an average value of the first distance along the first edge issubstantially same as an average value of the second distance along thesecond edge.

Optionally, the first edge substantially overlaps with the first centralline; and the second edge substantially overlaps with the first centralline.

Optionally, an orthographic projection of the third light emitting layeron the base substrate partially overlaps with an orthographic projectionof a respective second spacer on the base substrate; an orthographicprojection of the fourth light emitting layer on the base substratepartially overlaps with the orthographic projection of the respectivesecond spacer on the base substrate; a third edge of the third lightemitting layer crossing over the respective second spacer issubstantially parallel to a second central line of the respective secondspacer; and a fourth edge of the fourth light emitting layer crossingover the respective second spacer is substantially parallel to thesecond central line of the respective second spacer.

Optionally, the third edge is spaced apart from the second central lineby a third distance along a direction perpendicular to the secondcentral line; the fourth edge is spaced apart from the second centralline by a fourth distance along the direction perpendicular to thesecond central line; and an average value of the third distance alongthe third edge is substantially same as an average value of the fourthdistance along the fourth edge.

Optionally, the third edge substantially overlaps with the secondcentral line; and the fourth edge substantially overlaps with the secondcentral line.

Optionally, two subpixels of the respective first subpixel, therespective second subpixel, the respective third subpixel, and therespective fourth subpixel are subpixels of a same color; two lightemitting elements of the first light emitting element, the second lightemitting element, the third light emitting element, and the fourth lightemitting element are light emitting elements of a same color; and anodesof the two light emitting elements of the same color have differentareas or different shapes.

Optionally, the second anode and the fourth anode are the anodes of thetwo light emitting elements of the same color; the second anodecomprises a first main portion and a first extra portion; the fourthanode comprises a second main portion, a second extra portion, a thirdextra portion, a fourth extra portion, and a fifth extra portion; thefirst main portion is a combination of a rectangle part and a trianglepart; the second main portion is a combination of a rectangle part and atriangle part; the first main portion and the second main portion havesubstantially same shape; the first extra portion abuts the trianglepart of the first main portion; the second extra portion abuts a side ofthe rectangle part of the second main portion away from the trianglepart of the second main portion; the third extra portion abuts thetriangle part of the second main portion; the third extra portionconnects the fourth extra portion to the second main portion; the fourthextra portion connects the fifth extra portion to the third extraportion; the second extra portion, the second main portion, the thirdextra portion, the fourth extra portion, and the fifth extra portion aresequentially arranged along a direction substantially parallel to thesecond direction; and the fourth extra portion extends along a directionat a third inclined angle greater than zero with respect to the seconddirection.

Optionally, shortest distances between edges of the first anode otherthan one having the first via and the first subpixel aperture arenon-uniform; and/or shortest distances between edges of the third anodeother than one having the seventh via and the third subpixel apertureare non-uniform; and/or shortest distances between edges of the fourthanode other than one having the tenth via and the fourth subpixelaperture are non-uniform.

In another aspect, the present disclosure provides a display apparatus,comprising the array substrate described herein or fabricated by amethod described herein, and an integrated circuit connected to thearray substrate.

BRIEF DESCRIPTION OF THE FIGURES

The following drawings are merely examples for illustrative purposesaccording to various disclosed embodiments and are not intended to limitthe scope of the present invention.

FIG. 1 is a plan view of an array substrate in some embodimentsaccording to the present disclosure.

FIG. 2A is a circuit diagram illustrating the structure of a pixeldriving circuit in some embodiments according to the present disclosure.

FIG. 2B is a circuit diagram illustrating the structure of a pixeldriving circuit in some embodiments according to the present disclosure.

FIG. 3A is a diagram illustrating the structure of a plurality ofsubpixels of an array substrate in some embodiments according to thepresent disclosure.

FIG. 3B is a schematic diagram illustrating a subpixel arrangement of aplurality of subpixels of an array substrate in an array substrate insome embodiments according to the present disclosure.

FIG. 3C is a diagram illustrating the structure of a semiconductormaterial layer in a plurality of subpixels of an array substratedepicted in FIG. 3A.

FIG. 3D is a diagram illustrating the structure of a first conductivelayer in a plurality of subpixels of an array substrate depicted in FIG.3A.

FIG. 3E is a diagram illustrating the structure of a second conductivelayer in a plurality of subpixels of an array substrate depicted in FIG.3A.

FIG. 3F is a diagram illustrating the structure of a first signal linelayer in a plurality of subpixels of an array substrate depicted in FIG.3A.

FIG. 3G is a diagram illustrating the structure of a second signal linelayer in a plurality of subpixels of an array substrate depicted in FIG.3A.

FIG. 3H is a diagram illustrating the structure of anodes in a pluralityof subpixels of an array substrate depicted in FIG. 3A.

FIG. 4A is a cross-sectional view along an A-A′ line in FIG. 3A.

FIG. 4B is a cross-sectional view along a B-B′ line in FIG. 3A.

FIG. 4C is a cross-sectional view along a C-C′ line in FIG. 3A.

FIG. 4D is a cross-sectional view along a D-D′ line in FIG. 3A.

FIG. 5A is a diagram illustrating an arrangement of spacers in an arraysubstrate in some embodiments according to the present disclosure.

FIG. 5B is a schematic diagram illustrating an arrangement of spacers ina plurality of subpixels in an array substrate in some embodimentsaccording to the present disclosure.

FIG. 6A illustrate formation of a third light emitting layer in an arraysubstrate using a third mask plate in some embodiments according to thepresent disclosure.

FIG. 6B illustrate formation of a second light emitting layer in anarray substrate using a second mask plate in some embodiments accordingto the present disclosure.

FIG. 6C illustrate formation of a fourth light emitting layer in anarray substrate using a fourth mask plate in some embodiments accordingto the present disclosure.

FIG. 6D illustrate formation of a first light emitting layer in an arraysubstrate using a first mask plate in some embodiments according to thepresent disclosure.

FIG. 6E illustrates relative positions of boundaries of apertures of afirst mask plate, a second mask plate, a third mask plate, and a fourthmask plate, relative to a respective first spacer in an array substratein some embodiments according to the present disclosure.

FIG. 6F illustrates relative positions of light emitting layers relativeto a respective first spacer in an array substrate in some embodimentsaccording to the present disclosure.

FIG. 6G is a zoom-in view of a region surrounding a respective firstspacer in FIG. 6F.

FIG. 6H is a cross-sectional view along an L-L′ line in FIG. 6F.

FIG. 6I illustrate formation of a second light emitting layer and afourth light emitting layer in an array substrate using a same maskplate in some embodiments according to the present disclosure.

FIG. 7A illustrate formation of a third light emitting layer in an arraysubstrate using a third mask plate in some embodiments according to thepresent disclosure.

FIG. 7B illustrate formation of a second light emitting layer in anarray substrate using a second mask plate in some embodiments accordingto the present disclosure.

FIG. 7C illustrate formation of a fourth light emitting layer in anarray substrate using a fourth mask plate in some embodiments accordingto the present disclosure.

FIG. 7D illustrate formation of a first light emitting layer in an arraysubstrate using a first mask plate in some embodiments according to thepresent disclosure.

FIG. 7E illustrates relative positions of boundaries of apertures of afirst mask plate, a fourth mask plate, a third mask plate, and a fourthmask plate, relative to a respective second spacer in an array substratein some embodiments according to the present disclosure.

FIG. 7F illustrates relative positions of light emitting layers relativeto a respective second spacer in an array substrate in some embodimentsaccording to the present disclosure.

FIG. 7G is a zoom-in view of a region surrounding a respective secondspacer in FIG. 7F.

FIG. 7H illustrate formation of a second light emitting layer and afourth light emitting layer in an array substrate using a same maskplate in some embodiments according to the present disclosure.

FIG. 8A is a diagram illustrating anodes, a first signal line layer, anda semiconductor material layer in an array substrate in some embodimentsaccording to the present disclosure.

FIG. 8B is a cross-sectional view along an E-E′ line in FIG. 8A.

FIG. 8C is a cross-sectional view along an F-F′ line in FIG. 8A.

FIG. 8D is a cross-sectional view along a G-G′ line in FIG. 8A.

FIG. 8E is a diagram illustrating anodes, a first signal line layer, anda semiconductor material layer in an array substrate in some embodimentsaccording to the present disclosure.

FIG. 8F is a diagram illustrating anodes, a first signal line layer, anda semiconductor material layer in an array substrate in some embodimentsaccording to the present disclosure.

FIG. 9A is a diagram illustrating anodes, a first signal line layer, asecond signal line layer, and a semiconductor material layer in an arraysubstrate in some embodiments according to the present disclosure.

FIG. 9B is a cross-sectional view along an H-H′ line in FIG. 9A.

FIG. 9C is a cross-sectional view along an I-I′ line in FIG. 9A.

FIG. 9D is a cross-sectional view along a J-J′ line in FIG. 9A.

FIG. 9E is a cross-sectional view along a K-K′ line in FIG. 9A.

FIG. 10 illustrates relative positions between subpixel apertures andvias in an array substrate in some embodiments according to the presentdisclosure.

FIG. 11 illustrates a partial structure of a voltage supply line in someembodiments according to the present disclosure.

FIG. 12 illustrates a detailed structure of an interference preventingblock in some embodiments according to the present disclosure.

FIG. 13 schematically illustrates several repeating units respectivelyarranged in two repeating unit groups.

FIG. 14 illustrates structural difference between a second anode and afourth anode in some embodiments according to the present disclosure.

DETAILED DESCRIPTION

The disclosure will now be described more specifically with reference tothe following embodiments. It is to be noted that the followingdescriptions of some embodiments are presented herein for purpose ofillustration and description only. It is not intended to be exhaustiveor to be limited to the precise form disclosed.

The present disclosure provides, inter alia, an array substrate and adisplay apparatus that substantially obviate one or more of the problemsdue to limitations and disadvantages of the related art. In one aspect,the present disclosure provides an array substrate. In some embodiments,the array substrate includes a base substrate; a pixel definition layeron the base substrate, the pixel definition layer defining subpixelapertures; a spacer layer on a side of the pixel definition layer awayfrom the base substrate; and a plurality of light emitting elementsrespectively in a plurality of subpixels. Optionally, the plurality oflight emitting elements include a first light emitting element in arespective first subpixel, a second light emitting element in arespective second subpixel, a third light emitting element in arespective third subpixel, and a fourth light emitting element in arespective fourth subpixel. Optionally, the spacer layer includes firstspacers arranged in a first array and second spacers arranged in asecond array; the first array and the second array interlace with eachother. Optionally, a respective row of second spacers in the secondarray is between two respective rows of first spacers in the firstarray; a respective column of second spacers in the second array isbetween two respective columns of first spacers in the first array; arespective row of first spacers in the first array is between tworespective rows of second spacers in the second array; a respectivecolumn of first spacers in the first array is between two respectivecolumns of second spacers in the second array; a respective one of thefirst spacers is between a second anode of the second light emittingelement and a third anode of the third light emitting element; and arespective one of the second spacers is between the third anode and afourth anode of the fourth light emitting element.

FIG. 1 is a plan view of an array substrate in some embodimentsaccording to the present disclosure. Referring to FIG. 1, the arraysubstrate includes an array of subpixels Sp. Each subpixel includes anelectronic component, e.g., a light emitting element. In one example,the light emitting element is driven by a pixel driving circuit PDC. Thearray substrate includes a plurality of gate lines GL, a plurality ofdata lines DL, a plurality of voltage supply lines Vdd (e.g., highvoltage supply lines), and a plurality of second voltage supply lines(e.g., low voltage supply lines Vss). Light emission in a respective oneof the subpixels Sp is driven by a pixel driving circuit PDC. In oneexample, a high voltage signal (e.g., a VDD signal) is input, through arespective one of the plurality of voltage supply lines Vdd, to thepixel driving circuit PDC connected to an anode of the light emittingelement; a low voltage signal (e.g., a VSS signal) is input, through arespective one of the plurality of second voltage supply lines (e.g., alow voltage supply line Vss), to a cathode of the light emittingelement. A voltage difference between the high voltage signal (e.g., theVDD signal) and the low voltage signal (e.g., the VSS signal) is adriving voltage ΔV that drives light emission in the light emittingelement.

Various appropriate pixel driving circuits may be used in the presentarray substrate. Examples of appropriate driving circuits include 3T1C,2T1C, 4T1C, 4T2C, 5T2C, 6T1C, 7T1C, 7T2C and 8T2C. In some embodiments,the respective one of the plurality of pixel driving circuits is a 7T1Cdriving circuit. Various appropriate light emitting elements may be usedin the present array substrate. Examples of appropriate light emittingelements include organic light emitting diodes, quantum dots lightemitting diodes, and micro light emitting diodes. Optionally, the lightemitting element is micro light emitting diode. Optionally, the lightemitting element is an organic light emitting diode including an organiclight emitting layer.

FIG. 2A is a circuit diagram illustrating the structure of a pixeldriving circuit in some embodiments according to the present disclosure.Referring to FIG. 2, in some embodiments, the pixel driving circuitincludes a driving transistor Td; a storage capacitor Cst having a firstcapacitor electrode Ce1 and a second capacitor electrode Ce2; a firsttransistor T1 having a gate electrode connected to a respective one ofthe plurality of first reset control signal lines rst1, a sourceelectrode connected to a respective one of the plurality of first resetsignal lines Vint1, and a drain electrode connected to a first capacitorelectrode Ce1 of the storage capacitor Cst and a gate electrode of thedriving transistor Td; a second transistor T2 having a gate electrodeconnected to a gate line GL, a source electrode connected to the dataline DL, and a drain electrode connected to a source electrode of thedriving transistor Td; a third transistor T3 having a gate electrodeconnected to the gate line GL, a source electrode connected to the firstcapacitor electrode Ce1 of the storage capacitor Cst and the gateelectrode of the driving transistor Td, and a drain electrode connectedto a drain electrode of the driving transistor Td; a fourth transistorT4 having a gate electrode connected to a respective one of theplurality of light emitting control signal lines em, a source electrodeconnected to the voltage supply line Vdd, and a drain electrodeconnected to the source electrode of the driving transistor Td and thedrain electrode of the second transistor T2; a fifth transistor T5having a gate electrode connected to the respective one of the pluralityof light emitting control signal lines em, a source electrode connectedto drain electrodes of the driving transistor Td and the thirdtransistor T3, and a drain electrode connected to an anode of a lightemitting element LE; and a sixth transistor T6 having a gate electrodeconnected to a respective one of the plurality of second reset controlsignal lines rst2, a source electrode connected to a respective one ofthe plurality of second reset signal lines Vint2, and a drain electrodeconnected to the drain electrode of the fifth transistor and the anodeof the light emitting element LE. The second capacitor electrode Ce2 isconnected to the voltage supply line Vdd and the source electrode of thefourth transistor T4.

The pixel driving circuit further include a first node N1, a second nodeN2, a third node N3, and a fourth node N4. The first node N1 isconnected to the gate electrode of the driving transistor Td, the firstcapacitor electrode Ce1, and the source electrode of the thirdtransistor T3. The second node N2 is connected to the drain electrode ofthe fourth transistor T4, the drain electrode of the second transistorT2, and the source electrode of the driving transistor Td. The thirdnode N3 is connected to the drain electrode of the driving transistorTd, the drain electrode of the third transistor T3, and the sourceelectrode of the fifth transistor T5. The fourth node N4 is connected tothe drain electrode of the fifth transistor T5, the drain electrode ofthe sixth transistor T6, and the anode of the light emitting element LE.

FIG. 3A is a diagram illustrating the structure of a plurality ofsubpixels of an array substrate in some embodiments according to thepresent disclosure. FIG. 3B is a schematic diagram illustrating asubpixel arrangement of a plurality of subpixels of an array substratein an array substrate in some embodiments according to the presentdisclosure. Referring to FIG. 3A and FIG. 3B, the array substrate insome embodiments includes a plurality of subpixels. In some embodiments,the plurality of subpixels includes a respective first subpixel sp1, arespective second subpixel sp2, a respective third subpixel sp3, and arespective fourth subpixel sp4. Optionally, a respective pixel of thearray substrate includes the respective first subpixel sp1, therespective second subpixel sp2, the respective third subpixel sp3, andthe respective fourth subpixel sp4. The plurality of subpixels in thearray substrate are arranged in an array. In one example, the array ofthe plurality of subpixels includes a S1-S2-S3-S4 format repeatingarray, in which S1 stands for the respective first subpixel sp1, S2stands for the respective second subpixel sp2, S3 stands for therespective third subpixel sp3, and S4 stands for the respective fourthsubpixel sp4. In another example, the S1-S2-S3-S4 format is aC1-C2-C3-C4 format, in which C1 stands for the respective first subpixelsp1 of a first color, C2 stands for the respective second subpixel sp2of a second color, C3 stands for the respective third subpixel sp3 of athird color, and C4 stands for the respective fourth subpixel sp4 of afourth color. In another example, the S1-S2-S3-S4 format is aC1-C2-C3-C2′ format, in which C1 stands for the respective firstsubpixel sp1 of a first color, C2 stands for the respective secondsubpixel sp2 of a second color, C3 stands for the respective thirdsubpixel sp3 of a third color, and C2′ stands for the respective fourthsubpixel sp4 of the second color. In another example, the C1-C2-C3-C2′format is a R-G-B-G format, in which the respective first subpixel sp1is a red subpixel, the respective second subpixel sp2 is a greensubpixel, the respective third subpixel sp3 is a blue subpixel, and therespective fourth subpixel sp4 is a green subpixel.

As depicted in FIG. 3A and FIG. 3B, in some embodiments, a minimumrepeating unit of the plurality of subpixels of the array substrateincludes the respective first subpixel sp1, the respective secondsubpixel sp2, the respective third subpixel sp3, and the respectivefourth subpixel sp4. FIG. 3A shows a total of four subpixels of theplurality of subpixels sp arranged adjacent to each other. Each of therespective first subpixel sp1, the respective second subpixel sp2, therespective third subpixel sp3, and the respective fourth subpixel sp4,includes the first transistor T1, the second transistor T2, the thirdtransistor T3, the fourth transistor T4, the fifth transistor T5, thesixth transistor T6, and the driving transistor Td.

FIG. 3C is a diagram illustrating the structure of a semiconductormaterial layer in a plurality of subpixels of an array substratedepicted in FIG. 3A. FIG. 3D is a diagram illustrating the structure ofa first conductive layer in a plurality of subpixels of an arraysubstrate depicted in FIG. 3A. FIG. 3E is a diagram illustrating thestructure of a second conductive layer in a plurality of subpixels of anarray substrate depicted in FIG. 3A. FIG. 3F is a diagram illustratingthe structure of a first signal line layer in a plurality of subpixelsof an array substrate depicted in FIG. 3A. FIG. 3G is a diagramillustrating the structure of a second signal line layer in a pluralityof subpixels of an array substrate depicted in FIG. 3A. FIG. 3H is adiagram illustrating the structure of anodes in a plurality of subpixelsof an array substrate depicted in FIG. 3A. FIG. 4A is a cross-sectionalview along an A-A′ line in FIG. 3A. FIG. 4B is a cross-sectional viewalong a B-B′ line in FIG. 3A. FIG. 4C is a cross-sectional view along aC-C′ line in FIG. 3A. FIG. 4D is a cross-sectional view along a D-D′line in FIG. 3A. Referring to FIG. 3A to FIG. 3H, and FIG. 4A to FIG.4D, in some embodiments, the array substrate includes a base substrateBS, a semiconductor material layer SML on the base substrate BS, a gateinsulating layer GI on a side of the semiconductor material layer SMLaway from the base substrate BS, a first conductive layer on a side ofthe gate insulating layer GI away from the semiconductor material layerSML, an insulating layer IN on a side of the first conductive layer awayfrom the gate insulating layer GI, a second conductive layer on a sideof the insulating layer IN away from the first conductive layer, aninter-layer dielectric layer ILD on a side of the second conductivelayer away from the insulating layer IN, a first signal line layer on aside of the inter-layer dielectric layer ILD away from the secondconductive layer, a first planarization layer PLN1 on a side of thesignal line layer away from the inter-layer dielectric layer ILD, asecond signal line layer on a side of the first planarization layer PLN1away from the first signal line layer, a second planarization layer PLN2on a side of the second signal line layer away from the firstplanarization layer PLN1, and an anode layer on a side of the secondplanarization layer PLN2 away from the second signal line layer.

Referring to FIG. 2A, FIG. 3A, and FIG. 3C, in some embodiments, in eachsubpixel, the semiconductor material layer has a unitary structure. InFIG. 3C, the first subpixel on the left is annotated with labelsindicating regions corresponding to the plurality of transistors in thepixel driving circuit, including the first transistor T1, the secondtransistor T2, the third transistor T3, the fourth transistor T4, thefifth transistor T5, the sixth transistor T6, and the driving transistorTd. In FIG. 3B, the subpixel on the right is annotated with labelsindicating components of each of the plurality of transistors in thepixel driving circuit. For example, the first transistor T1 includes anactive layer ACT1, a source electrode S1, and a drain electrode D1. Thesecond transistor T2 includes an active layer ACT2, a source electrodeS2, and a drain electrode D2. The third transistor T3 includes an activelayer ACT3, a source electrode S3, and a drain electrode D3. The fourthtransistor T4 includes an active layer ACT4, a source electrode S4, anda drain electrode D4. The fifth transistor T5 includes an active layerACT5, a source electrode S5, and a drain electrode D5. The sixthtransistor T6 includes an active layer ACT6, a source electrode S6, anda drain electrode D6. The driving transistor Td includes an active layerACTd, a source electrode Sd, and a drain electrode Dd. In one example,the active layers (ACT1, ACT2, ACT3, ACT4, ACT5, ACT6 and ACTd), thesource electrodes (S1, S2, S3, S4, S5, S6, and Sd), and the drainelectrodes (D1, D2, D3, D4, D5, D6, and Dd) of the transistors (T1, T2,T3, T4, T5, T6, and Td) in a respective subpixel are parts of a unitarystructure in the respective subpixel. In another example, the activelayers (ACT1, ACT2, ACT3, ACT4, ACT5, ACT6, and ACTd), the sourceelectrodes (S1, S2, S3, S4, S5, S6, and Sd), and the drain electrodes(D1, D2, D3, D4, D5, D6, and Dd) of the transistors (T1, T2, T3, T4, T5,T6, and Td) are in a same layer.

Referring to FIG. 2A, FIG. 3A, FIG. 3D, FIG. 4A, and FIG. 4B, the firstconductive layer in some embodiments includes a plurality of gate linesGL, a plurality of first reset control signal lines rst1, a plurality oflight emitting control signal lines em, a plurality of second resetcontrol signal lines rst2, and a first capacitor electrode Ce1 of thestorage capacitor Cst. Various appropriate electrode materials andvarious appropriate fabricating methods may be used to make the firstconductive layer. For example, a conductive material may be deposited onthe substrate by a plasma-enhanced chemical vapor deposition (PECVD)process and patterned. Examples of appropriate conductive materials formaking the first conductive layer include, but are not limited to,aluminum, copper, molybdenum, chromium, aluminum copper alloy, coppermolybdenum alloy, molybdenum aluminum alloy, aluminum chromium alloy,copper chromium alloy, molybdenum chromium alloy, copper molybdenumaluminum alloy, and the like. Optionally, the plurality of gate linesGL, the plurality of first reset control signal lines rst1, theplurality of light emitting control signal lines em, the plurality ofsecond reset control signal lines rst2, and the first capacitorelectrode Ce1 are in a same layer.

As used herein, the term “same layer” refers to the relationship betweenthe layers simultaneously formed in the same step. In one example, theplurality of gate lines GL and the first capacitor electrode Ce1 are ina same layer when they are formed as a result of one or more steps of asame patterning process performed in a same layer of material. Inanother example, the plurality of gate lines GL and the first capacitorelectrode Ce1 can be formed in a same layer by simultaneously performingthe step of forming the plurality of gate lines GL, and the step offorming the first capacitor electrode Ce1. The term “same layer” doesnot always mean that the thickness of the layer or the height of thelayer in a cross-sectional view is the same.

Referring to FIG. 2A, FIG. 3A, and FIG. 3E, the second conductive layerin some embodiments includes a plurality of first reset signal linesVint1, a second capacitor electrode Ce2 of the storage capacitor Cst, aninterference preventing block IPB, and a plurality of second resetsignal lines Vint2. Various appropriate conductive materials and variousappropriate fabricating methods may be used to make the secondconductive layer. For example, a conductive material may be deposited onthe substrate by a plasma-enhanced chemical vapor deposition (PECVD)process and patterned. Examples of appropriate conductive materials formaking the second conductive layer include, but are not limited to,aluminum, copper, molybdenum, chromium, aluminum copper alloy, coppermolybdenum alloy, molybdenum aluminum alloy, aluminum chromium alloy,copper chromium alloy, molybdenum chromium alloy, copper molybdenumaluminum alloy, and the like. Optionally, the plurality of first resetsignal lines Vint1, the plurality of second reset signal lines Vint2,the interference preventing block IPB, and the second capacitorelectrode Ce2 are in a same layer. Referring to Referring to FIG. 2A,FIG. 3A, FIG. 3D, and FIG. 4B, in some embodiments, the interferencepreventing block IPB is in a same layer as the second capacitorelectrode Ce2. The respective one of the plurality of voltage supplylines Vdd is connected to the interference preventing block IPB througha third main via v3. Optionally, the third main via v3 extends throughthe inter-layer dielectric layer ILD.

Referring to FIG. 2A, FIG. 3A, FIG. 3C, and FIG. 3F, the first signalline layer in some embodiments includes a plurality of voltage supplylines Vdd, a node connecting line C1 n, a second connecting line C12,and a third connecting line C13. The node connecting line C1 n connectsthe first capacitor electrode Ce1 and the source electrode of the thirdtransistor T3 in a respective subpixel together. The second connectingline C12 connects a respective one of the plurality of first resetsignal lines Vint1 and the source electrode of the first transistor T1in a respective subpixel together. The third connecting line C13connects a respective one of the plurality of second reset signal linesVint2 and the source electrode of the sixth transistor T6 in arespective subpixel together. The first signal line layer in someembodiments further includes a relay electrode RE in a respective one ofthe plurality of subpixels sp. The relay electrode connects a sourceelectrode of the fifth transistor T5 in the respective one of theplurality of subpixels sp to an anode contact pad in the respective oneof the plurality of subpixels sp. Various appropriate conductivematerials and various appropriate fabricating methods may be used tomake the signal line layer. For example, a conductive material may bedeposited on the substrate by a plasma-enhanced chemical vapordeposition (PECVD) process and patterned. Examples of appropriateconductive materials for making the first signal line layer include, butare not limited to, aluminum, copper, molybdenum, chromium, aluminumcopper alloy, copper molybdenum alloy, molybdenum aluminum alloy,aluminum chromium alloy, copper chromium alloy, molybdenum chromiumalloy, copper molybdenum aluminum alloy, and the like. Optionally, theplurality of voltage supply lines Vdd, the plurality of data lines DL,the node connecting line C1 n, the second connecting line C12, and thethird connecting line C13, and the relay electrode RE, are in a samelayer.

FIG. 4C is a cross-sectional view along a C-C′ line in FIG. 3A.Referring to FIG. 2A, FIG. 3A, FIG. 3F, and FIG. 4C, in someembodiments, the second connecting line C12 connects the respective oneof the plurality of first reset signal lines Vint1 and the sourceelectrode S1 of the first transistor T1 in a respective subpixeltogether. The respective one of the plurality of first reset signallines Vint1 is configured to provide a reset signal to the sourceelectrode S1 of the first transistor T1 in the respective subpixel,through the second connecting line C12. Optionally, the secondconnecting line C12 is connected to the respective one of the pluralityof first reset signal lines Vint1 through a fifth main via v5 extendingthrough the inter-layer dielectric layer ILD. Optionally, the secondconnecting line C12 is connected to the source electrode S1 of the firsttransistor T1 in the respective subpixel through a sixth main via v6extending through the inter-layer dielectric layer ILD, the insulatinglayer IN, and the gate insulating layer GI.

FIG. 4D is a cross-sectional view along a D-D′ line in FIG. 3A.Referring to FIG. 2A, FIG. 3A, FIG. 3F, and FIG. 4D, in someembodiments, the third connecting line C13 connects the respective oneof the plurality of second reset signal lines Vint2 and the sourceelectrode S6 of the sixth transistor T6 in a respective subpixeltogether. The respective one of the plurality of second reset signallines Vint2 is configured to provide a reset signal to the sourceelectrode S6 of the sixth transistor T6 in the respective subpixel,through the second connecting line C12. Optionally, the third connectingline C13 is connected to the respective one of the plurality of secondreset signal lines Vint2 through a seventh main via v7 extending throughthe inter-layer dielectric layer ILD. Optionally, the third connectingline C13 is connected to the source electrode S6 of the sixth transistorT6 in the respective subpixel through an eighth main via v8 extendingthrough the inter-layer dielectric layer ILD, the insulating layer IN,and the gate insulating layer GI.

Referring to FIG. 2A, FIG. 3A, and FIG. 3G, the second signal line layerin some embodiments includes a plurality of data line DL. Optionally,the second signal line layer further includes an anode contact pad ACPin a respective one of the plurality of subpixels sp. The anode contactpad ACP is electrically connected to a source electrode of the fifthtransistor T5 in the respective one of the plurality of subpixels spthrough a relay electrode in the respective one of the plurality ofsubpixels sp. Referring to Referring to FIG. 2A, FIG. 3A, FIG. 3F, FIG.3G, and FIG. 4B, in some embodiments, a respective one of the pluralityof data lines DL is connected to a connecting portion CP through a viav4-1 extending through the first planarization layer PLN-1, and theconnecting portion CP is connected to a source electrode S2 of thesecond transistor through a via v4-2 extending through the inter-layerdielectric layer ILD, the insulating layer IN, and the gate insulatinglayer GI.

Referring to FIG. 2A, FIG. 3A, FIG. 3D, FIG. 3E, and FIG. 4A, in someembodiments, an orthographic projection of the second capacitorelectrode Ce2 on a base substrate BS completely covers, with a margin,an orthographic projection of the first capacitor electrode Ce1 on thebase substrate BS except for a hole region H in which a portion of thesecond capacitor electrode Ce2 is absent. In some embodiments, thesignal line layer includes a node connecting line C1 n on a side of theinter-layer dielectric layer ILD away from the second capacitorelectrode Ce2. The node connecting line C1 n is in a same layer as theplurality of voltage supply lines Vdd and the plurality of data linesDL. Optionally, the array substrate further includes a first main via v1in the hole region H and extending through the inter-layer dielectriclayer ILD and the insulating layer IN. Optionally, the node connectingline C1 n is connected to the first capacitor electrode Ce1 through thefirst main via v1. In some embodiments, the first capacitor electrodeCe1 is on a side of the gate insulating layer IN away from the basesubstrate BS. Optionally, the array substrate further includes a firstmain via v1 and a second main via v2. The first main via v1 is in thehole region H and extends through the inter-layer dielectric layer ILDand the insulating layer IN. The second main via v2 extends through theinter-layer dielectric layer ILD, the insulating layer IN, and the gateinsulating layer GI. Optionally, the node connecting line C1 n isconnected to the first capacitor electrode Ce1 through the first mainvia v1, and is connected node connecting line C1 n is connected thesemiconductor material layer SML through the second main via v2.Optionally, the node connecting line C1 n is connected to the sourceelectrode S3 of third transistor, as depicted in FIG. 4A.

Referring to Referring to FIG. 2A, FIG. 3A, FIG. 3E, and FIG. 4B, insome embodiments, the interference preventing block IPB is in a samelayer as the second capacitor electrode Ce2. The respective one of theplurality of voltage supply lines Vdd is connected to the interferencepreventing block IPB through a third main via v3. Optionally, the thirdmain via v3 extends through the inter-layer dielectric layer ILD.Optionally, an orthographic projection of the interference preventingblock IPB on the base substrate BS partially overlaps with anorthographic projection of the respective one of the plurality ofvoltage supply lines Vdd on the base substrate BS. Optionally, theorthographic projection of the interference preventing block IPB on thebase substrate BS at least partially overlaps with an orthographicprojection of an active layer ACT3 of the third transistor T3 on thebase substrate BS. Optionally, the orthographic projection of theinterference preventing block IPB on the base substrate BS at leastpartially overlaps with an orthographic projection of a drain electrodeD1 of the first transistor T1 on the base substrate BS. Optionally,orthographic projections of a portion of the interference preventingblock IPB and a portion of the respective one of the plurality ofvoltage supply lines Vdd on the base substrate BS commonly overlaps withan orthographic projection of a portion of the active layer ACT3 of thethird transistor T3 on the base substrate BS.

As used herein, the active layer refers to a component of the transistorcomprising at least a portion of the semiconductor material layer whoseorthographic projection on the base substrate overlaps with anorthographic projection of a gate electrode on the base substrate. Asused herein, a source electrode refers to a component of the transistorconnected to one side of the active layer, and a drain electrode refersto a component of the transistor connected to another side of the activelayer. In the context of a double-gate type transistor (for example, thethird transistor T3), the active layer refers to a component of thetransistor comprising a first portion of the semiconductor materiallayer whose orthographic projection on the base substrate overlaps withan orthographic projection of a first gate on the base substrate, asecond portion of the semiconductor material layer whose orthographicprojection on the base substrate overlaps with an orthographicprojection of a second gate on the base substrate, and a third portionbetween the first portion and the second portion. In the context of adouble-gate type transistor, a source electrode refers to a component ofthe transistor connected to a side of the first portion distal to thethird portion, and a drain electrode refers to a component of thetransistor connected to a side of the second portion distal to the thirdportion.

Referring to FIG. 2A, FIG. 3A, and FIG. 3H, the array substrate in someembodiments includes a first anode AD1 in the respective first subpixelsp1, a second anode AD2 in the respective second subpixel sp2, a thirdanode AD3 in the respective third subpixel sp3, and a fourth anode AD4in the respective fourth subpixel sp4. The first anode AD1, the secondanode AD2, the third anode AD3, and the fourth anode AD4, arerespectively anodes of a first light emitting element, a second lightemitting element, a third light emitting element, and a fourth lightemitting element, respectively in the respective first subpixel sp1, therespective second subpixel sp2, the respective third subpixel sp3, andthe respective fourth subpixel sp4. The array substrate in someembodiments further includes a pixel definition layer PDL on a side ofthe first anode AD1, the second anode AD2, the third anode AD3, and thefourth anode AD4 away from the second planarization layer PLN2. Thearray substrate further includes a first subpixel aperture SA1, a secondsubpixel aperture SA2, a third subpixel aperture SA3, a fourth subpixelaperture SA4 respectively extending through the pixel definition layerPDL. In some embodiments, the respective first subpixel sp1 is a redsubpixel, and the first anode AD1 is an anode of the red subpixel; therespective second subpixel sp2 is a first green subpixel, and the secondanode AD2 is an anode of the first green subpixel; the respective thirdsubpixel sp3 is a blue subpixel, and the third anode AD3 is an anode ofthe blue subpixel; the respective fourth subpixel sp4 is a second greensubpixel, and the fourth anode AD4 is an anode of the second greensubpixel.

In some embodiments, the array substrate further includes a plurality ofspacers on a side of the second planarization layer away from the basesubstrate. The spacers are configured to space apart a fine metal maskfrom the array substrate during the process of depositing light emittingmaterials onto the array substrate. By having the spacers, damages tothe pixel driving circuit caused by the fine metal mask during thedeposition process can be effectively avoided. FIG. 5A is a schematicdiagram illustrating an arrangement of spacers in a plurality ofsubpixels in an array substrate in some embodiments according to thepresent disclosure. Referring to FIG. 5A, the plurality of spacers insome embodiments includes first spacers PS1 arranged in a first arrayand second spacers PS2 arranged in a second array. The first array andthe second array interlace with each other. A respective row of secondspacers PS2 in the second array is between two respective rows of firstspacers PS1 in the first array. A respective column of second spacersPS2 in the second array is between two respective columns of firstspacers PS1 in the first array. A respective row of first spacers PS1 inthe first array is between two respective rows of second spacers PS2 inthe second array. A respective column of first spacers PS1 in the firstarray is between two respective columns of second spacers PS2 in thesecond array.

As shown in FIG. 5A, two adjacent first spacers in the respective row offirst spacers PS1 are spaced apart by eight subpixels; two adjacentsecond spacers in the respective row of second spacers PS2 are spacedapart by eight subpixels; two adjacent first spacers in the respectivecolumn of first spacers PS1 are spaced apart by six subpixels; and twoadjacent second spacers in the respective column of second spacers PS2are spaced apart by six subpixels. Optionally, a ratio of a number ofsubpixels to a number of spacers is in a range of 48:1 to 15:1, e.g.,48:1 to 40:1, 40:1 to 35:1, 35:1 to 30:1, 30:1 to 25:1, 25:1 to 20:1, or20:1 to 15:1. Optionally, a ratio of a number of subpixels to a numberof spacers is in a range of 28:1 to 20:1, e.g., 27:1 to 21:1, 26:1 to22:1, or 25:1 to 23:1. Optionally, a ratio of a number of subpixels to anumber of spacers is 24:1, as shown in FIG. 5A.

FIG. 5B is a diagram illustrating an arrangement of spacers in an arraysubstrate in some embodiments according to the present disclosure. FIG.5B illustrates positions of a plurality of spacers relative to anodes inthe array substrate. Referring to FIG. 5B, in some embodiments, arespective one of the first spacers PS1 is between the second anode AD2and the third anode AD3; and a respective one of the second spacers PS2is between the third anode AD3 and the fourth anode AD4. Optionally, therespective one of the first spacers PS1 is between the second subpixelaperture SA2 and the third subpixel aperture SA3; and the respective oneof the second spacers PS2 is between the third subpixel aperture SA3 andthe fourth subpixel aperture SA4. In one example, the respective firstsubpixel sp1 is a red subpixel, and the first anode AD1 is an anode ofthe red subpixel; the respective second subpixel sp2 is a first greensubpixel, and the second anode AD2 is an anode of the first greensubpixel; the third subpixel sp3 is a blue subpixel, and the respectivethird anode AD3 is an anode of the blue subpixel; the respective fourthsubpixel sp4 is a second green subpixel, and the fourth anode AD4 is ananode of the second green subpixel. In another example, the respectiveone of the first spacers PS1 is between the second anode AD2 of thefirst green subpixel and the third anode AD3 of the blue subpixel; andthe respective one of the second spacers PS2 is between the third anodeAD3 of the blue subpixel and the fourth anode AD4 of the second greensubpixel. In another example, the respective one of the first spacersPS1 is between the second subpixel aperture SA2 of the first greensubpixel and the third subpixel aperture SA3 of the blue subpixel; andthe respective one of the second spacers PS2 is between the thirdsubpixel aperture SA3 of the blue subpixel and the fourth subpixelaperture SA4 of the second green subpixel.

In some embodiments, an average occupied area of the respective one ofthe first spacers PS1 is in a range of 10 μm² to 500 μm², e.g., 10 μm²to 50 μm², 50 μm² to 100 μm², 100 μm² to 150 μm², 150 μm² to 200 μm²,200 μm² to 250 μm², 250 μm² to 300 μm², 300 μm² to 350 μm², 350 μm² to400 μm², 400 μm² to 450 μm², or 450 μm² to 500 μm²; and an averageoccupied area of the respective one of the second spacers PS2 is in arange of 10 μm² to 500 μm², e.g., 10 μm² to 50 μm², 50 μm² to 100 μm²,100 μm² to 150 μm², 150 μm² to 200 μm², 200 μm² to 250 μm², 250 μm² to300 μm², 300 μm² to 350 μm², 350 μm² to 400 μm², 400 μm² to 450 μm², or450 μm² to 500 μm². Optionally, an average occupied area of therespective one of the first spacers PS1 is in a range of 80 μm² to 120μm², e.g., 80 μm² to 90 μm², 90 μm² to 100 μm², 100 μm² to 110 μm², or110 μm² to 120 μm²; and an average occupied area of the respective oneof the second spacers PS2 is in a range of 80 μm² to 120 μm², e.g., 80μm² to 90 μm², 90 μm² to 100 μm², 100 μm² to 110 μm², or 110 μm² to 120μm². Optionally, the average occupied area of the respective one of thefirst spacers PS1 is 100 μm²; and the average occupied area of therespective one of the second spacers PS2 is 100 μm². Optionally, anaverage occupied area of a respective one of the plurality of subpixelsis in a range of 1400 μm² to 2000 μm², e.g., 1400 μm² to 1500 μm², 1500μm² to 1600 μm², 1600 μm² to 1700 μm², 1700 μm² to 1800 μm², 1800 μm² to1900 μm², or 1900 μm² to 2000 μm². Optionally, the average occupied areaof the respective one of the plurality of subpixels is 1676 μm².Optionally, a percentage of a total occupied area of the first spacersPS1 and the second spacers PS2 relative to a total occupied area of theplurality of subpixels is in a range of 0.01% to 1%, e.g., 0.01% to0.05%, 0.05% to 0.1%, 0.1% to 0.15%, 0.15% to 0.20%, 0.20% to 0.25%,0.25% to 0.30%, 0.30% to 0.35%, 0.35% to 0.40%, 0.40% to 0.45%, 0.45% to0.50%, 0.50% to 0.55%, 0.55% to 0.60%, 0.60% to 0.65%, 0.65% to 0.70%,0.70% to 0.75%, 0.75% to 0.80%, 0.80% to 0.85%, 0.85% to 0.90%, 0.90% to0.95%, or 0.95% to 1.0%. Optionally, a percentage of a total occupiedarea of the first spacers PS1 and the second spacers PS2 relative to atotal occupied area of the plurality of subpixels is in a range of 0.15%to 0.35%, e.g., 0.15% to 0.20%, 0.20% to 0.25%, 0.25% to 0.30%, or 0.30%to 0.35%. Optionally, the percentage of the total occupied area of thefirst spacers PS1 and the second spacers PS2 relative to the totaloccupied area of the plurality of subpixels is 0.25%.

The inventors of the present disclosure discover that, unexpected andsurprisingly, the arrangement and distribution of the spacers in thepresent array substrate can effectively minimize or preventcontamination of spacer residues during the process of light emittingmaterial deposition, at the same time still effectively preventingdamages to the pixel driving circuit. Moreover, a ratio of a number ofsubpixels to a number of spacers in a typical array substrate can bereduced from, e.g., a typical value of 8:1 to a value equal to orgreater than 20:1. Further, the percentage of the total occupied area ofthe spacers relative to the total occupied area of the plurality ofsubpixels can be reduced from, e.g., a typical value of 2% to equal toor less than 0.35%.

Referring to FIG. 5A and FIG. 5B, in some embodiments, the plurality ofsubpixels sp are arranged in an array of a plurality of rows along afirst direction DR1 and a plurality of columns along a second directionDR2. The respective row of the first spacers PS1 is along the firstdirection DR1. The respective row of the second spacers PS2 is along thefirst direction DR1. The respective column of the first spacers PS1 isalong the second direction DR2. The respective column of the secondspacers PS2 is along the second direction DR2.

Referring to FIG. 5A and FIG. 5B, in some embodiments, two adjacentfirst spacers in the respective row of first spacers are spaced apart bytwice of a first inter-anode distance IAD1, the first inter-anodedistance IAD1 being a distance along the first direction DR1 and betweencenters of two most adjacent third anodes respectively from two mostadjacent third light emitting elements along the first direction DR1.Optionally, two adjacent second spacers in the respective row of secondspacers are spaced apart by twice of the first inter-anode distanceIAD1. In some embodiments, two adjacent first spacers in the respectivecolumn of first spacers are spaced apart by three times of a secondinter-anode distance IAD2, the second inter-anode distance IAD2 being adistance along the second direction DR2 and between centers of two mostadjacent third anodes respectively from two most adjacent third lightemitting elements along the second direction DR2. Optionally, twoadjacent second spacers in the respective column of second spacers arespaced apart by three times of the second inter-anode distance IAD2.

Referring to FIG. 5A and FIG. 5B, in some embodiments, an orthographicprojection of the respective one of the first spacers PS1 on the basesubstrate at least partially overlaps with an orthographic projection ofthe second anode AD2 on the base substrate. Optionally, an orthographicprojection of the respective one of the second spacers PS2 on the basesubstrate at least partially overlaps with an orthographic projection ofthe fourth anode AD4 on the base substrate.

Referring to FIG. 5A and FIG. 5B, in some embodiments, a first virtualline along the first direction crosses DR1 crosses over the respectiveone of the first spacers PS1 and the fourth via V2-1. Optionally, asecond virtual line VL2 along the first direction DR1 crosses over therespective one of the second spacers PS2 and the tenth via V4-1.

FIG. 6A illustrate formation of a third light emitting layer in an arraysubstrate using a third mask plate in some embodiments according to thepresent disclosure. FIG. 6B illustrate formation of a second lightemitting layer in an array substrate using a second mask plate in someembodiments according to the present disclosure. FIG. 6C illustrateformation of a fourth light emitting layer in an array substrate using afourth mask plate in some embodiments according to the presentdisclosure. FIG. 6D illustrate formation of a first light emitting layerin an array substrate using a first mask plate in some embodimentsaccording to the present disclosure. FIG. 6E illustrates relativepositions of boundaries of apertures of a first mask plate, a secondmask plate, a third mask plate, and a fourth mask plate, relative to arespective first spacer in an array substrate in some embodimentsaccording to the present disclosure. Referring to FIG. 6A to FIG. 6E,subsequent to forming the spacers (first spacers PS1 and second spacersPS2), a mask plate (e.g., a fine metal mask plate) is placed on thespacers for deposition of light emitting materials on top of the anodes.In one example, a first mask plate MK1 is used for forming a first lightemitting layer on the first anode AD1 of the first subpixel (FIG. 6D), asecond mask plate MK2 is used for forming a second light emitting layeron the second anode AD2 of the second subpixel (FIG. 6B), a fourth maskplate MK4 is used for forming a fourth light emitting layer on thefourth anode AD2 of the fourth subpixel (FIG. 6C), a third mask plateMK3 is used for forming a third light emitting layer on the third anodeAD3 of the third subpixel (FIG. 6A). A first boundary of an aperture BA1of the first mask plate MK1 is shown in FIG. 6D and FIG. 6E. A secondboundary of an aperture BA2 of the second mask plate MK2 is shown inFIG. 6B and FIG. 6E. A fourth boundary of an aperture BA4 of the fourthmask plate MK4 is shown in FIG. 6C and FIG. 6E. A third boundary of anaperture BA3 of the third mask plate MK3 is shown in FIG. 6D and FIG.6E.

As shown in FIG. 6A, an orthographic projection of a portion of thethird boundary of an aperture BA3 of the third mask plate MK3 on a basesubstrate substantially overlaps with an orthographic projection of afirst central line ML1 of a respective first spacer PS1. The firstcentral line ML1 has a first inclined angle α with respect to the firstdirection DR1. As used herein, the term “substantially overlap” refersto two orthographic projections at least 50 percent, e.g., at least 60percent, at least 70 percent, at least 80 percent, at least 90 percent,at least 95 percent, at least 99 percent, or 100 percent overlappingwith each other.

As shown in FIG. 6B, an orthographic projection of a portion of thesecond boundary of an aperture BA2 of the second mask plate MK2 on abase substrate substantially overlaps with an orthographic projection ofa first central line ML1 of a respective first spacer PS1. The firstcentral line ML1 has a first inclined angle α with respect to the firstdirection DR1.

Referring to FIG. 6A, FIG. 6B, and FIG. 6E, in some embodiments, anorthographic projection of a portion of the third boundary of anaperture BA3 of the third mask plate MK3 on a base substratesubstantially overlaps with an orthographic projection of a firstcentral line ML1 of a respective first spacer PS1, and an orthographicprojection of a portion of the second boundary of an aperture BA2 of thesecond mask plate MK2 on a base substrate substantially overlaps with anorthographic projection of a first central line ML1 of the respectivefirst spacer PS1. The first central line ML1 has a first inclined angleα with respect to the first direction DR1. Optionally, the firstinclined angle α is in a range of 40 degrees to 80 degrees, e.g., 40degrees to 50 degrees, 50 degrees to 60 degrees, 60 degrees to 70degrees, or 70 degrees to 80 degrees. Optionally, the first inclinedangle α is 60 degrees.

FIG. 6F illustrates relative positions of light emitting layers relativeto a respective first spacer in an array substrate in some embodimentsaccording to the present disclosure. Referring to FIG. 6F, the arraysubstrate in some embodiments further includes a first light emittinglayer EM1 on a side of the first anode AD1 away from a base substrate, asecond light emitting layer EM2 on a side of the second anode AD2 awayfrom the base substrate, a third light emitting layer EM3 on a side ofthe third anode AD3 away from the base substrate, and a fourth lightemitting layer EM4 on a side of the fourth anode AD4 away from the basesubstrate. In one example, the first subpixel is a red subpixel, thefirst anode AD1 is an anode of the red subpixel, and the first lightemitting layer EM1 is a red light emitting layer; the second subpixel isa first green subpixel, the second anode AD2 is an anode of the firstgreen subpixel, and the second light emitting layer EM2 is a green lightemitting layer; the third subpixel is a blue subpixel, the third anodeAD3 is an anode of the blue subpixel, and the third light emitting layerEM3 is a blue light emitting layer; the fourth subpixel is a secondgreen subpixel, the fourth anode AD4 is an anode of the second greensubpixel, and the fourth light emitting layer EM4 is also a green lightemitting layer.

FIG. 6G is a zoom-in view of a region surrounding a respective firstspacer in FIG. 6F. Referring to FIG. 6F and FIG. 6G, in someembodiments, an orthographic projection of the third light emittinglayer EM3 on a base substrate partially overlaps with an orthographicprojection of the respective first spacer PS1 on the base substrate; andan orthographic projection of the second light emitting layer EM2 on thebase substrate partially overlaps with the orthographic projection ofthe respective first spacer PS1 on the base substrate. A first edge E1of the third light emitting layer EM3 crossing over the respective firstspacer PS1 is substantially parallel to a first central line ML1 of therespective first spacer PS1; and a second edge E2 of the second lightemitting layer EM2 crossing over the respective first spacer PS1 issubstantially parallel to the first central line ML1 of the respectivefirst spacer PS1. As used herein, the term “substantially parallel”means that an angle between two lines is in the range of 0 degree toapproximately 15 degrees, e.g., 0 degree to approximately 5 degrees, 5degree to approximately 10 degrees, or 10 degree to approximately 15degrees.

Optionally, the first edge E1 is spaced apart from the first centralline ML1 by a first distance d1 along a direction perpendicular to thefirst central line ML1; and the second edge E2 is spaced apart from thefirst central line ML1 by a second distance d2 along the directionperpendicular to the first central line ML1. Optionally, an averagevalue of the first distance d1 along the first edge E1 is substantiallysame as an average value of the second distance d2 along the second edgeE2. As used herein, the term “substantially the same” refers to adifference between two values not exceeding 10% of a base value (e.g.,one of the two values), e.g., not exceeding 8%, not exceeding 6%, notexceeding 4%, not exceeding 2%, not exceeding 1%, not exceeding 0.5%,not exceeding 0.1%, not exceeding 0.05%, and not exceeding 0.01%, of thebase value. Optionally, the first edge E1 substantially overlaps withthe first central line ML1. Optionally, the second edge E2 substantiallyoverlaps with the first central line ML1.

FIG. 6H is a cross-sectional view along an L-L′ line in FIG. 6F.Referring to FIG. 6H, the display panel in the display region in someembodiments includes a base substrate BS (e.g., a flexible basesubstrate); a semiconductor material layer SML (see, also, FIG. 3C) onthe base substrate BS; a gate insulating layer GI on a side of thesemiconductor material layer SML away from the base substrate BS; aninsulating layer IN on a side of the gate insulating layer GI away fromthe base substrate BS; an inter-layer dielectric layer ILD on a side ofthe insulating layer IN away from the gate insulating layer GI; a relayelectrode layer (e.g., a respective second relay electrode RE2 and arespective third relay electrode RE3 as shown in FIG. 6H) on a side ofthe inter-layer dielectric layer ILD away from the insulating layer IN;a first planarization layer PLN1 on a side of the relay electrode layeraway from the inter-layer dielectric layer ILD; an anode contact padlayer (e.g., a respective second anode contact pad ACP2 and a respectivethird anode contact pad ACP3 as shown in FIG. 6H) on a side of the firstplanarization layer PLN1 away from the inter-layer dielectric layer ILD;a second planarization layer PLN2 on side of the anode contact pad layeraway from the first planarization layer PLN1; a pixel definition layerPDL defining subpixel apertures and on a side of the secondplanarization layer PLN2 away from the base substrate BS; a spacer layer(e.g., a respective one of first spacers PS1 as shown in FIG. 6H) on aside of the pixel definition layer PDL away from the secondplanarization layer PLN2; an anode layer (e.g., the second anode AD2 andthe third anode AD3 as shown in FIG. 6H) on a side of the secondplanarization layer PLN2 away from the first planarization layer PLN1;and a light emitting layer (e.g., a second light emitting layer EM2 anda third light emitting layer EM3) on a side of the anode layer away fromthe second planarization layer PLN2; and a cathode layer CD on a side ofthe light emitting layer away from the anode layer.

FIG. 6I illustrate formation of a second light emitting layer and afourth light emitting layer in an array substrate using a same maskplate in some embodiments according to the present disclosure. Referringto FIG. 6I, in one example, a same mask plate MK24 is used for forming asecond light emitting layer on the second anode AD2 of the secondsubpixel and a fourth light emitting layer on the fourth anode AD4 of afourth subpixel (FIG. 6B). A second boundary of an aperture BA2 of thesame mask plate MK24 and a fourth boundary of an aperture BA4 of thesame mask plate MK24 is shown in FIG. 6I.

FIG. 7A illustrate formation of a third light emitting layer in an arraysubstrate using a third mask plate in some embodiments according to thepresent disclosure. FIG. 7B illustrate formation of a second lightemitting layer in an array substrate using a second mask plate in someembodiments according to the present disclosure. FIG. 7C illustrateformation of a fourth light emitting layer in an array substrate using afourth mask plate in some embodiments according to the presentdisclosure. FIG. 7D illustrate formation of a first light emitting layerin an array substrate using a first mask plate in some embodimentsaccording to the present disclosure. FIG. 7E illustrates relativepositions of boundaries of apertures of a first mask plate, a fourthmask plate, a third mask plate, and a fourth mask plate, relative to arespective second spacer in an array substrate in some embodimentsaccording to the present disclosure. Referring to FIG. 7A to FIG. 7E,subsequent to forming the spacers (first spacers PS1 and second spacersPS2), a mask plate (e.g., a fine metal mask plate) is placed on thespacers for deposition of light emitting materials on top of the anodes.In one example, a first mask plate MK1 is used for forming a first lightemitting layer on the first anode AD1 of the first subpixel (FIG. 7D), asecond mask plate MK2 is used for forming a second light emitting layeron the second anode AD2 of the second subpixel (FIG. 7B), a third maskplate MK3 is used for forming a third light emitting layer on the thirdanode AD3 of the third subpixel (FIG. 7A), and a fourth mask plate MK4is used for forming a fourth light emitting layer on the fourth anodeAD4 of the fourth subpixel (FIG. 7C). A first boundary of an apertureBA1 of the first mask plate MK1 is shown in FIG. 7D and FIG. 7E. Asecond boundary of an aperture BA2 of the second mask plate MK2 is shownin FIG. 7B and FIG. 7E. A fourth boundary of an aperture BA4 of thefourth mask plate MK4 is shown in FIG. 7C and FIG. 7E. A third boundaryof an aperture BA3 of the third mask plate MK3 is shown in FIG. 7D andFIG. 7E.

As shown in FIG. 7A, an orthographic projection of a portion of thethird boundary of an aperture BA3 of the third mask plate MK3 on a basesubstrate substantially overlaps with an orthographic projection of asecond central line ML2 of a respective second spacer PS2. The secondcentral line ML2 has a second inclined angle β with respect to the firstdirection DR1.

As shown in FIG. 7C, an orthographic projection of a portion of thefourth boundary of an aperture BA4 of the fourth mask plate MK4 on abase substrate substantially overlaps with an orthographic projection ofa second central line ML2 of a respective second spacer PS2. The secondcentral line ML2 has a second inclined angle β with respect to the firstdirection DR1.

Referring to FIG. 7A, FIG. 7B, and FIG. 7E, in some embodiments, anorthographic projection of a portion of the third boundary of anaperture BA3 of the third mask plate MK3 on a base substratesubstantially overlaps with an orthographic projection of a secondcentral line ML2 of a respective second spacer PS2, and an orthographicprojection of a portion of the fourth boundary of an aperture BA4 of thefourth mask plate MK4 on a base substrate substantially overlaps with anorthographic projection of a second central line ML2 of the respectivesecond spacer PS2. The second central line ML2 has a second inclinedangle β with respect to the first direction DR1. Optionally, the secondinclined angle β is in a range of 10 degrees to 50 degrees, e.g., 10degrees to 20 degrees, 20 degrees to 30 degrees, 30 degrees to 40degrees, or 40 degrees to 50 degrees. Optionally, the second inclinedangle β is 30 degrees.

FIG. 7F illustrates relative positions of light emitting layers relativeto a respective second spacer in an array substrate in some embodimentsaccording to the present disclosure. Referring to FIG. 7F, the arraysubstrate in some embodiments further includes a first light emittinglayer EM1 on a side of the first anode AD1 away from a base substrate, asecond light emitting layer EM2 on a side of the second anode AD2 awayfrom the base substrate, a third light emitting layer EM3 on a side ofthe third anode AD3 away from the base substrate, and a fourth lightemitting layer EM4 on a side of the fourth anode AD4 away from the basesubstrate. In one example, the first subpixel is a red subpixel, thefirst anode AD1 is an anode of the red subpixel, and the first lightemitting layer EM1 is a red light emitting layer; the second subpixel isa first green subpixel, the second anode AD2 is an anode of the firstgreen subpixel, and the second light emitting layer EM2 is a green lightemitting layer; the third subpixel is a blue subpixel, the third anodeAD3 is an anode of the blue subpixel, and the third light emitting layerEM3 is a blue light emitting layer; the fourth subpixel is a secondgreen subpixel, the fourth anode AD4 is an anode of the second greensubpixel, and the fourth light emitting layer EM4 is also a green lightemitting layer.

FIG. 7G is a zoom-in view of a region surrounding a respective secondspacer in FIG. 7F. Referring to FIG. 7F and FIG. 7G, in someembodiments, an orthographic projection of the third light emittinglayer EM3 on a base substrate partially overlaps with an orthographicprojection of the respective second spacer PS2 on the base substrate;and an orthographic projection of the fourth light emitting layer EM4 onthe base substrate partially overlaps with the orthographic projectionof the respective second spacer PS2 on the base substrate. A third edgeE3 of the third light emitting layer EM3 crossing over the respectivesecond spacer PS2 is substantially parallel to a second central line ML2of the respective second spacer PS2; and a fourth edge E4 of the fourthlight emitting layer EM4 crossing over the respective second spacer PS2is substantially parallel to the second central line ML2 of therespective second spacer PS2.

Optionally, the third edge E3 is spaced apart from the second centralline ML2 by a third distance d3 along a direction perpendicular to thesecond central line ML2; and the fourth edge E4 is spaced apart from thesecond central line ML2 by a fourth distance d4 along the directionperpendicular to the second central line ML2. Optionally, an averagevalue of the third distance d3 along the third edge E3 is substantiallysame as an average value of the fourth distance d4 along the fourth edgeE4. Optionally, the third edge E3 substantially overlaps with the secondcentral line ML2. Optionally, the fourth edge E4 substantially overlapswith the second central line ML2.

FIG. 7H illustrate formation of a second light emitting layer and afourth light emitting layer in an array substrate using a same maskplate in some embodiments according to the present disclosure. Referringto FIG. 7H, in one example, a same mask plate MK24 is used for forming asecond light emitting layer on the second anode AD2 of the secondsubpixel and a fourth light emitting layer on the fourth anode AD4 of afourth subpixel. A second boundary of an aperture BA2 of the same maskplate MK24 and a fourth boundary of an aperture BA4 of the same maskplate MK24 is shown in FIG. 7H.

In some embodiments, an orthographic projection of a respective anode ina respective subpixel on a base substrate at least partially overlapswith an orthographic projection of the first node in the respectivesubpixel on the base substrate. Referring to FIG. 2A, FIG. 3A to FIG.3H, and FIG. 4A, in some embodiments, an orthographic projection of thefirst anode AD1 in a respective first subpixel sp1 on the base substrateBS at least partially overlaps with an orthographic projection of thenode connecting line C1 n in the respective first subpixel sp1 on thebase substrate BS; an orthographic projection of the second anode AD2 ina respective second subpixel sp2 on the base substrate BS at leastpartially overlaps with an orthographic projection of the nodeconnecting line C1 n in the respective second subpixel sp2 on the basesubstrate BS; an orthographic projection of the third anode AD3 in arespective third subpixel sp3 on the base substrate BS at leastpartially overlaps with an orthographic projection of the nodeconnecting line C1 n in the respective third subpixel sp3 on the basesubstrate BS; and an orthographic projection of the fourth anode AD4 ina respective fourth subpixel sp4 on the base substrate BS at leastpartially overlaps with an orthographic projection of the nodeconnecting line C1 n in the respective fourth subpixel sp4 on the basesubstrate BS.

Optionally, an orthographic projection of the first anode AD1 in arespective first subpixel sp1 on the base substrate BS at leastpartially overlaps with an orthographic projection of the firstcapacitor electrode Ce1 in the respective first subpixel sp1 on the basesubstrate BS; an orthographic projection of the second anode AD2 in arespective second subpixel sp2 on the base substrate BS at leastpartially overlaps with an orthographic projection of the firstcapacitor electrode Ce1 in the respective second subpixel sp2 on thebase substrate BS; an orthographic projection of the third anode AD3 ina respective third subpixel sp3 on the base substrate BS at leastpartially overlaps with an orthographic projection of the firstcapacitor electrode Ce1 in the respective third subpixel sp3 on the basesubstrate BS; and an orthographic projection of the fourth anode AD4 ina respective fourth subpixel sp4 on the base substrate BS at leastpartially overlaps with an orthographic projection of the firstcapacitor electrode Ce1 in the respective fourth subpixel sp4 on thebase substrate BS.

Optionally, an orthographic projection of the first anode AD1 in arespective first subpixel sp1 on the base substrate BS at leastpartially overlaps with an orthographic projection of the secondcapacitor electrode Ce2 in the respective first subpixel sp1 on the basesubstrate BS; an orthographic projection of the second anode AD2 in arespective second subpixel sp2 on the base substrate BS at leastpartially overlaps with an orthographic projection of the secondcapacitor electrode Ce2 in the respective second subpixel sp2 on thebase substrate BS; an orthographic projection of the third anode AD3 ina respective third subpixel sp3 on the base substrate BS at leastpartially overlaps with an orthographic projection of the secondcapacitor electrode Ce2 in the respective third subpixel sp3 on the basesubstrate BS; and an orthographic projection of the fourth anode AD4 ina respective fourth subpixel sp4 on the base substrate BS at leastpartially overlaps with an orthographic projection of the secondcapacitor electrode Ce2 in the respective fourth subpixel sp4 on thebase substrate BS.

Optionally, an orthographic projection of the first anode AD1 in arespective first subpixel sp1 on the base substrate BS at leastpartially overlaps with an orthographic projection of the active layerACTd of the driving transistor Td in the respective first subpixel sp1on the base substrate BS; an orthographic projection of the second anodeAD2 in a respective second subpixel sp2 on the base substrate BS atleast partially overlaps with an orthographic projection of the activelayer ACTd of the driving transistor Td in the respective secondsubpixel sp2 on the base substrate BS; an orthographic projection of thethird anode AD3 in a respective third subpixel sp3 on the base substrateBS at least partially overlaps with an orthographic projection of theactive layer ACTd of the driving transistor Td in the respective thirdsubpixel sp3 on the base substrate BS; and an orthographic projection ofthe fourth anode AD4 in a respective fourth subpixel sp4 on the basesubstrate BS at least partially overlaps with an orthographic projectionof the active layer ACTd of the driving transistor Td in the respectivefourth subpixel sp4 on the base substrate BS.

Optionally, an orthographic projection of the first anode AD1 in arespective first subpixel sp1 on the base substrate BS covers anorthographic projection of a portion of the node connecting line C1 n ata position connecting to the first capacitor electrode Ce1 in therespective first subpixel sp1 on the base substrate BS; an orthographicprojection of the second anode AD2 in a respective second subpixel sp2on the base substrate BS covers an orthographic projection of a portionof the node connecting line C1 n at a position connecting to the firstcapacitor electrode Ce1 in the respective second subpixel sp2 on thebase substrate BS; an orthographic projection of the third anode AD3 ina respective third subpixel sp3 on the base substrate BS covers anorthographic projection of a portion of the node connecting line C1 n ata position connecting to the first capacitor electrode Ce1 in therespective third subpixel sp3 on the base substrate BS; and anorthographic projection of the fourth anode AD4 in a respective fourthsubpixel sp4 on the base substrate BS covers an orthographic projectionof a portion of the node connecting line C1 n at a position connectingto the first capacitor electrode Ce1 in the respective fourth subpixelsp4 on the base substrate BS.

In the present array substrate, the orthographic projections of theanodes respectively at least partially overlaps with the N1 nodes of thepixel driving circuits, loading among various anodes and loading amongvarious pixel driving circuits in respective subpixels can be maintainedconsistent with respect to each other, improving image displayuniformity.

FIG. 8A is a diagram illustrating anodes, a first signal line layer, anda semiconductor material layer in an array substrate in some embodimentsaccording to the present disclosure. FIG. 8B is a cross-sectional viewalong an E-E′ line in FIG. 8A. Referring to FIG. 8A and FIG. 8B, in someembodiments, an orthographic projection of the third anode AD3 on thebase substrate BS at least partially overlaps with an orthographicprojection of a third transistor in a respective third subpixel on thebase substrate BS and at least partially overlaps with an orthographicprojection of a third transistor in a respective fourth subpixeladjacent to the respective third subpixel on the base substrate BS.Optionally, the orthographic projection of the third anode AD3 on thebase substrate BS covers an orthographic projection of a sourceelectrode S3 of the third transistor in the respective third subpixel onthe base substrate BS, partially overlaps with an orthographicprojection of an active layer ACT3 of the third transistor in therespective third subpixel on the base substrate BS, and partiallyoverlaps with an orthographic projection of an active layer ACT3 of thethird transistor in the respective fourth subpixel on the base substrateBS.

FIG. 8C is a cross-sectional view along an F-F′ line in FIG. 8A.Referring to FIG. 8A and FIG. 8C, in some embodiments, an orthographicprojection of the first anode AD1 on the base substrate BS at leastpartially overlaps with an orthographic projection of a third transistorin a respective first subpixel on the base substrate BS. Optionally, theorthographic projection of the first anode AD1 on the base substrate BSpartially overlaps with an orthographic projection of a source electrodeS3 of the third transistor in the respective first subpixel on the basesubstrate BS, and partially overlaps with an orthographic projection ofan active layer ACT3 of the third transistor in the respective firstsubpixel on the base substrate BS.

In the present array substrate, the orthographic projections of theanodes respectively at least partially overlaps with the active layersof the third transistors. Because the anodes are typically made of areflective material, they can prevent ultraviolet rays from irradiatingon the active layer, thereby protecting the transistors.

FIG. 8D is a cross-sectional view along a G-G′ line in FIG. 8A.Referring to FIG. 8A and FIG. 8D, in some embodiments, an orthographicprojection of the fourth anode AD4 on the base substrate BS at leastpartially overlaps with an orthographic projection of a third transistorin a respective second subpixel on the base substrate BS. Optionally,the orthographic projection of the fourth anode AD4 on the basesubstrate BS partially overlaps with an orthographic projection of asource electrode S3 of the third transistor in the respective secondsubpixel on the base substrate BS, and partially overlaps with anorthographic projection of an active layer ACT3 of the third transistorin the respective second subpixel on the base substrate BS.

Referring to FIG. 8A, counter-clock wise, a respective third anode RAD3is adjacent to a first respective fourth anode RAD4-1, a firstrespective first anode RAD1-1, a first respective second anode RAD2-1, asecond respective first anode RAD1-2, a second respective fourth anodeRAD4-2, a second respective second anode RAD2-2, and a third respectivefirst anode RAD1-3. Optionally, clock wise, a respective third anodeRAD3 is adjacent to a first respective fourth anode RAD4-1, a firstrespective first anode RAD1-1, a first respective second anode RAD2-1, asecond respective first anode RAD1-2, a second respective fourth anodeRAD4-2, a second respective second anode RAD2-2, and a third respectivefirst anode RAD1-3. Optionally, a shortest distance between therespective third anode RAD3 and any one of the first respective fourthanode RAD4-1, the first respective first anode RAD1-1, the firstrespective second anode RAD2-1, the second respective first anodeRAD1-2, a virtual line VL passing through co-linear edges respectivelyfrom the second respective fourth anode RAD4-2 and the second respectivesecond anode RAD2-2, or the third respective first anode RAD1-3 is in arange of 2.0 μm to 22 μm. Optionally, a shortest distance between therespective third anode RAD3 and the first respective fourth anode RAD4-1is less than a shortest distance between the respective third anode RAD3and the third respective first anode RAD1-3, less than a shortestdistance between the respective third anode RAD3 and the firstrespective first anode RAD1-A, less than a shortest distance between therespective third anode RAD3 and the second respective first anodeRAD1-2, less than a shortest distance between the respective third anodeRAD3 and a virtual line passing through co-linear edges respectivelyfrom the second respective fourth anode RAD4-2 and the second respectivesecond anode RAD2-2, and less than a shortest distance between therespective third anode RAD3 and the first respective second anodeRAD2-1. Optionally, a shortest distance between the respective thirdanode RAD3 and the third respective first anode RAD1-3 is greater than ashortest distance between the respective third anode RAD3 and the firstrespective first anode RAD1-1, which is greater than a shortest distancebetween the respective third anode RAD3 and the second respective firstanode RAD1-2, which is greater than a shortest distance between therespective third anode RAD3 and a virtual line passing through co-linearedges respectively from the second respective fourth anode RAD4-2 andthe second respective second anode RAD2-2, which is greater than ashortest distance between the respective third anode RAD3 and the firstrespective second anode RAD2-1, which is greater than a shortestdistance between the respective third anode RAD3 and the firstrespective fourth anode RAD4-1. Optionally, a shortest distance b1between the respective third anode RAD3 and the first respective fourthanode RAD4-1 is in a range of 2.0 μm to 5.0 μm (e.g., 2.0 μm to 2.5 μm,2.5 μm to 3.0 μm, 3.0 μm to 3.5 μm, 3.5 μm to 4.0 μm, 4.0 μm to 4.5 μm,4.5 μm to 5.0 μm, or optionally 4.0 μm); a shortest distance b2 betweenthe respective third anode RAD3 and the first respective first anodeRAD1-1 is in a range of 8.0 μm to 20.0 μm (e.g., 8.0 μm to 9.0 μm, 9.0μm to 10.0 μm, 10.0 μm to 11.0 μm, 11.0 μm to 12.0 μm, 12.0 μm to 13.0μm, 13.0 μm to 14.0 μm, 14.0 μm to 15.0 μm, 15.0 μm to 16.0 μm, 16.0 μmto 17.0 μm, 17.0 μm to 18.0 μm, 18.0 μm to 19.0 μm, 19.0 μm to 20.0 μm,or optionally 13.7 μm); a shortest distance b3 between the respectivethird anode RAD3 and the first respective second anode RAD2-1 is in arange of 5.0 μm to 15.0 μm (e.g., 5.0 μm to 6.0 μm, 6.0 μm to 7.0 μm,7.0 μm to 8.0 μm, 8.0 μm to 9.0 μm, 9.0 μm to 10.0 μm, 10.0 μm to 11.0μm, 11.0 μm to 12.0 μm, 12.0 μm to 13.0 μm, 13.0 μm to 14.0 μm, 14.0 μmto 15.0 μm, or optionally 9.5 μm); a shortest distance b4 between therespective third anode RAD3 and the second respective first anode RAD1-2is in a range of 7.0 μm to 17.0 μm (e.g., 7.0 μm to 8.0 μm, 8.0 μm to9.0 μm, 9.0 μm to 10.0 μm, 10.0 μm to 11.0 μm, 11.0 μm to 12.0 μm, 12.0μm to 13.0 μm, 13.0 μm to 14.0 μm, 14.0 μm to 15.0 μm, 15.0 μm to 16.0μm, 16.0 μm to 17.0 μm, or optionally 9.5 μm); a shortest distance b5between the respective third anode RAD3 and a virtual line VL passingthrough co-linear edges respectively from the second respective fourthanode RAD4-2 and the second respective second anode RAD2-2 is in a rangeof 5.0 μm to 16.0 μm (e.g., 5.0 μm to 6.0 μm, 6.0 μm to 7.0 μm, 7.0 μmto 8.0 μm, 8.0 μm to 9.0 μm, 9.0 μm to 10.0 μm, 10.0 μm to 11.0 μm, 11.0μm to 12.0 μm, 12.0 μm to 13.0 μm, 13.0 μm to 14.0 μm, 14.0 μm to 15.0μm, 15.0 μm to 16.0 μm, or optionally 10.0 μm); and a shortest distanceb6 between the respective third anode RAD3 and the third respectivefirst anode RAD1-3 is in a range of 9.0 μm to 22.0 μm (e.g., 9.0 μm to10.0 μm, 10.0 μm to 11.0 μm, 11.0 μm to 12.0 μm, 12.0 μm to 13.0 μm,13.0 μm to 14.0 μm, 14.0 μm to 15.0 μm, 15.0 μm to 16.0 μm, 16.0 μm to17.0 μm, 17.0 μm to 18.0 μm, 18.0 μm to 19.0 μm, 19.0 μm to 20.0 μm,20.0 μm to 21.0 μm, 21.0 μm to 22.0 μm, or optionally 14.8 μm).

FIG. 8E is a diagram illustrating anodes, a first signal line layer, anda semiconductor material layer in an array substrate in some embodimentsaccording to the present disclosure. Referring to FIG. 8E, counter-clockwise, a respective first anode RAD1 is adjacent to a first respectivesecond anode RAD2-1, a first respective fourth anode RAD4-1, a firstrespective third anode RAD3-1, a second respective second anode RAD2-2,a second respective third anode RAD3-2, a second respective fourth anodeRAD4-2, and a third respective third anode RAD3-3. Optionally, clockwise, a respective first anode RAD1 is adjacent to a first respectivesecond anode RAD2-1, a first respective fourth anode RAD4-1, a firstrespective third anode RAD3-1, a second respective second anode RAD2-2,a second respective third anode RAD3-2, a second respective fourth anodeRAD4-2, and a third respective third anode RAD3-3. Optionally, ashortest distance between the respective first anode RAD1 and any one ofthe first respective second anode RAD2-1, the first respective fourthanode RAD4-1, the first respective third anode RAD3-1, the secondrespective second anode RAD2-2, the second respective third anodeRAD3-2, the second respective fourth anode RAD4-2, or the thirdrespective third anode RAD3-3 in in a range of 3.0 μm to 25 μm.Optionally, a shortest distance between the respective first anode RAD1and the second respective fourth anode RAD4-2 is less than a shortestdistance between the respective first anode RAD1 and the secondrespective second anode RAD2-2, less than a shortest distance betweenthe respective first anode RAD1 and the first respective fourth anodeRAD4-1, less than a shortest distance between the respective first anodeRAD1 and the first respective third anode RAD3-1, less than a shortestdistance between the respective first anode RAD1 and the secondrespective third anode RAD3-2, less than a shortest distance between therespective first anode RAD1 and the third respective third anode RAD3-3,and less than a shortest distance between the respective first anodeRAD1 and the first respective second anode RAD2-1. Optionally, ashortest distance between the respective first anode RAD1 and the secondrespective second anode RAD2-2 is greater than a shortest distancebetween the respective first anode RAD1 and the first respective fourthanode RAD4-1, which is greater than a shortest distance between therespective first anode RAD1 and the first respective third anode RAD3-1,which is greater than a shortest distance between the respective firstanode RAD1 and the second respective third anode RAD3-2, which isgreater than a shortest distance between the respective first anode RAD1and the third respective third anode RAD3-3, which is greater than ashortest distance between the respective first anode RAD1 and the firstrespective second anode RAD2-1, which is greater than a shortestdistance between the respective first anode RAD1 and the secondrespective fourth anode RAD4-2. Optionally, a shortest distance r1between the respective first anode RAD1 and the first respective secondanode RAD2-1 is in a range of 3.0 μm to 14.0 μm (e.g., 3.0 μm to 4.0 μm,4.0 μm to 5.0 μm, 5.0 μm to 6.0 μm, 6.0 μm to 7.0 μm, 7.0 μm to 8.0 μm,8.0 μm to 9.0 μm, 9.0 μm to 10.0 μm, 10.0 μm to 11.0 μm, 11.0 μm to 12.0μm, 12.0 μm to 13.0 μm, 13.0 μm to 14.0 μm, or optionally 7.85 μm); ashortest distance r2 between the respective first anode RAD1 and thefirst respective fourth anode RAD4-1 is in a range of 10.0 μm to 24.0 μm(e.g., 10.0 μm to 10.5 μm, 10.5 μm to 11.5 μm, 11.5 μm to 12.5 μm, 12.5μm to 13.5 μm, 13.5 μm to 14.5 μm, 14.5 μm to 15.5 μm, 15.5 μm to 16.5μm, 16.5 μm to 17.5 μm, 17.5 μm to 18.5 μm, 18.5 μm to 19.5 μm, 19.5 μmto 20.5 μm, 20.5 μm to 21.5 μm, 21.5 μm to 22.5 μm, 22.5 μm to 23.5 μm,23.5 μm to 24.0 μm, or optionally 16.6 μm); a shortest distance r3 (sameas b6) between the respective first anode RAD1 and the first respectivethird anode RAD3-1 is in a range of 9.0 μm to 21.0 μm (e.g., 9.0 μm to10.0 μm, 10.0 μm to 11.0 μm, 11.0 μm to 12.0 μm, 12.0 μm to 13.0 μm,13.0 μm to 14.0 μm, 14.0 μm to 15.0 μm, 15.0 μm to 16.0 μm, 16.0 μm to17.0 μm, 17.0 μm to 18.0 μm, 18.0 μm to 19.0 μm, 19.0 μm to 20.0 μm,20.0 μm to 21.0 μm, or optionally 14.8 μm); a shortest distance r4between the respective first anode RAD1 and the second respective secondanode RAD2-2 is in a range of 11.0 μm to 25.0 μm (e.g., 11.0 μm to 12.0μm, 12.0 μm to 13.0 μm, 13.0 μm to 14.0 μm, 14.0 μm to 15.0 μm, 15.0 μmto 16.0 μm, 16.0 μm to 17.0 μm, 17.0 μm to 18.0 μm, 18.0 μm to 19.0 μm,19.0 μm to 20.0 μm, 20.0 μm to 21.0 μm, 21.0 μm to 22.0 μm, 22.0 μm to23.0 μm, 23.0 μm to 24.0 μm, 24.0 μm to 25.0 μm, or optionally 18.2 μm);a shortest distance r5 (same as b2) between the respective first anodeRAD1 and the second respective third anode RAD3-2 is in a range of 8.0μm to 20.0 μm (e.g., 8.0 μm to 9.0 μm, 9.0 μm to 10.0 μm, 10.0 μm to11.0 μm, 11.0 μm to 12.0 μm, 12.0 μm to 13.0 μm, 13.0 μm to 14.0 μm,14.0 μm to 15.0 μm, 15.0 μm to 16.0 μm, 16.0 μm to 17.0 μm, 17.0 μm to18.0 μm, 18.0 μm to 19.0 μm, 19.0 μm to 20.0 μm, or optionally 13.7 μm);a shortest distance r6 between the respective first anode RAD1 and thesecond respective fourth anode RAD4-2 is in a range of 2.5 μm to 7.5 μm(e.g., 2.5 μm to 3.5 μm, 3.5 μm to 4.5 μm, 4.5 μm to 5.5 μm, 5.5 μm to6.5 μm, 6.5 μm to 7.5 μm, or optionally 5.0 μm); and a shortest distancer7 (same as b4) between the respective first anode RAD1 and the thirdrespective third anode RAD3-3 is in a range of 7.0 μm to 16.0 μm (e.g.,7.0 μm to 8.0 μm, 8.0 μm to 9.0 μm, 9.0 μm to 10.0 μm, 10.0 μm to 11.0μm, 11.0 μm to 12.0 μm, 12.0 μm to 13.0 μm, 13.0 μm to 14.0 μm, 14.0 μmto 15.0 μm, 15.0 μm to 16.0 μm, or optionally 9.5 μm).

FIG. 8F is a diagram illustrating anodes, a first signal line layer, anda semiconductor material layer in an array substrate in some embodimentsaccording to the present disclosure. Referring to FIG. 8F, counter-clockwise, a respective fourth anode RAD4 is adjacent to a respective secondanode RAD2, a first respective third anode RAD3-1, a first respectivefirst anode RAD1-1, a second respective third anode RAD3-2, and a secondrespective first anode RAD1-2. Optionally, clock wise, a respectivefourth anode RAD4 is adjacent to a respective second anode RAD2, a firstrespective third anode RAD3-1, a first respective first anode RAD1-1, asecond respective third anode RA D3-2, and a second respective firstanode RAD1-2. Optionally, a shortest distance between the respectivefourth anode RAD4 and any one of the first respective first anodeRAD1-1, the second respective third anode RAD3-2, or the secondrespective first anode RAD1-2 is in a range of 2.0 μm to 25.0 μm.Optionally, a shortest distance between the respective fourth anode RAD4and the second respective first anode RAD1-2 is greater than a shortestdistance between the respective fourth anode RAD4 and the firstrespective first anode RAD1-1, and greater than a shortest distancebetween the respective fourth anode RAD4 and the second respective thirdanode RAD3-2. Optionally, a distance g1 between the respective fourthanode RAD4 and the respective second anode RAD2, and along a virtualline VL passing through co-linear edges respectively from the respectivefourth anode RAD4 and the respective second anode RAD2, is in a range of10.0 μm to 25.0 μm (e.g., 10.0 μm to 10.5 μm, 10.5 μm to 11.5 μm, 11.5μm to 12.5 μm, 12.5 μm to 13.5 μm, 13.5 μm to 14.5 μm, 14.5 μm to 15.5μm, 15.5 μm to 16.5 μm, 16.5 μm to 17.5 μm, 17.5 μm to 18.5 μm, 18.5 μmto 19.5 μm, 19.5 μm to 20.5 μm, 20.5 μm to 21.5 μm, 21.5 μm to 22.5 μm,22.5 μm to 23.5 μm, 23.5 μm to 24.5 μm, 24.5 μm to 25.0 μm, oroptionally 16.3 μm); a shortest distance g3 (same as b5) between thefirst respective third anode RAD3-1 and a virtual line VL passingthrough co-linear edges respectively from the respective fourth anodeRAD4 and the respective second anode RAD2 is in a range of 6.0 μm to15.0 μm (e.g., 6.0 μm to 7.0 μm, 7.0 μm to 8.0 μm, 8.0 μm to 9.0 μm, 9.0μm to 10.0 μm, 10.0 μm to 11.0 μm, 11.0 μm to 12.0 μm, 12.0 μm to 13.0μm, 13.0 μm to 14.0 μm, 14.0 μm to 15.0 μm, or optionally 10.0 μm); ashortest distance g4 between a protrusion portion PP of the firstrespective first anode RAD1-1 that is closest to the respective fourthanode, and the virtual line VL passing through the co-linear edgesrespectively from the respective fourth anode RAD4 and the respectivesecond anode RAD2 is in a range of 5.0 μm to 16.0 μm (e.g., 5.0 μm to6.0 μm, 6.0 μm to 7.0 μm, 7.0 μm to 8.0 μm, 8.0 μm to 9.0 μm, 9.0 μm to10.0 μm, 10.0 μm to 11.0 μm, 11.0 μm to 12.0 μm, 12.0 μm to 13.0 μm,13.0 μm to 14.0 μm, 14.0 μm to 15.0 μm, 15.0 μm to 16.0 μm, oroptionally 10.7 μm); a shortest distance g5 (same as r6) between therespective fourth anode RAD4 and the first respective first anode RAD1-1is in a range of 2.5 μm to 7.5 μm (e.g., 2.5 μm to 3.5 μm, 3.5 μm to 4.5μm, 4.5 μm to 5.5 μm, 5.5 μm to 6.5 μm, 6.5 μm to 7.5 μm, or optionally5.0 μm); a shortest distance g6 (same as b1) between the respectivefourth anode RAD4 and the second respective third anode RAD3-2 is in arange of 2.0 μm to 5.0 μm (e.g., 2.0 μm to 2.5 μm, 2.5 μm to 3.0 μm, 3.0μm to 3.5 μm, 3.5 μm to 4.0 μm, 4.0 μm to 4.5 μm, 4.5 μm to 5.0 μm, oroptionally 4.0 μm); and a shortest distance g7 (same as r2) between therespective fourth anode RAD4 and the second respective first anodeRAD1-2 is in a range of 10.0 μm to 25.0 μm (e.g., 10.0 μm to 10.5 μm,10.5 μm to 11.5 μm, 11.5 μm to 12.5 μm, 12.5 μm to 13.5 μm, 13.5 μm to14.5 μm, 14.5 μm to 15.5 μm, 15.5 μm to 16.5 μm, 16.5 μm to 17.5 μm,17.5 μm to 18.5 μm, 18.5 μm to 19.5 μm, 19.5 μm to 20.5 μm, 20.5 μm to21.5 μm, 21.5 μm to 22.5 μm, 22.5 μm to 23.5 μm, 23.5 μm to 24.5 μm,24.5 μm to 25.0 μm, or optionally 16.6 μm).

The shortest distance g1 in the present array substrate is greater thanthat in a typical array substrate. By enlarging the shortest distanceg1, the illuminance centers of pixels in the array substrate can have asignificantly more uniform distribution.

FIG. 9A is a diagram illustrating anodes, a first signal line layer, asecond signal line layer, and a semiconductor material layer in an arraysubstrate in some embodiments according to the present disclosure. FIG.9B is a cross-sectional view along an H-H′ line in FIG. 9A. FIG. 9C is across-sectional view along an I-I′ line in FIG. 9A. FIG. 9D is across-sectional view along a J-J′ line in FIG. 9A. FIG. 9E is across-sectional view along a K-K′ line in FIG. 9A. Referring to FIG. 9Ato FIG. 9E, in some embodiments, in a respective first subpixel sp1, thefirst anode AD1 is connected to a first anode contact pad ACP1 through afirst via V1-1 extending through the second planarization layer PLN-2,the first anode contact pad ACP1 is connected to a first relay electrodeRE1 through a second via V1-2 extending through the first planarizationlayer PLN-1, and the first relay electrode RE1 is connected to a drainelectrode D5 of the fifth transistor in the respective first subpixelsp1 through a third via V1-3 extending through the inter-layerdielectric layer ILD, the insulating layer IN, and the gate insulatinglayer GI; in a respective second subpixel sp2, the second anode AD2 isconnected to a second anode contact pad ACP2 through a fourth via V2-1extending through the second planarization layer PLN-2, the second anodecontact pad ACP2 is connected to a second relay electrode RE2 through afifth via V2-2 extending through the first planarization layer PLN-1,and the second relay electrode RE1 is connected to a drain electrode D5of the fifth transistor in the respective second subpixel sp2 through asixth via V2-3 extending through the inter-layer dielectric layer ILD,the insulating layer IN, and the gate insulating layer GI; in arespective third subpixel sp3, the third anode AD3 is connected to athird anode contact pad ACP3 through a seventh via V3-1 extendingthrough the second planarization layer PLN-2, the third anode contactpad ACP3 is connected to a third relay electrode RE3 through an eighthvia V3-2 extending through the first planarization layer PLN-1, and thethird relay electrode RE3 is connected to a drain electrode D5 of thefifth transistor in the respective third subpixel sp3 through a ninthvia V3-3 extending through the inter-layer dielectric layer ILD, theinsulating layer IN, and the gate insulating layer GI; and in arespective fourth subpixel sp4, the fourth anode AD4 is connected to afourth anode contact pad ACP4 through a tenth via V4-1 extending throughthe second planarization layer PLN-2, the fourth anode contact pad ACP4is connected to a fourth relay electrode RE4 through an eleventh viaV4-2 extending through the first planarization layer PLN-1, and thefourth relay electrode RE4 is connected to a drain electrode D5 of thefifth transistor in the respective fourth subpixel sp4 through a twelfthvia V4-3 extending through the inter-layer dielectric layer ILD, theinsulating layer IN, and the gate insulating layer GI.

As shown in FIG. 9B to FIG. 9E, in some embodiment, an orthographicprojection of a portion of the first anode contact pad ACP1 in thesecond via V1-2 on the base substrate BS is substantiallynon-overlapping with an orthographic projection of a portion of thefirst anode AD1 in the first via V1-1 on the base substrate BS; and issubstantially non-overlapping with an orthographic projection of aportion of the first relay electrode RE1 in the third via V1-3 on thebase substrate BS; an orthographic projection of a portion of the secondanode contact pad ACP2 in the fifth via V2-2 on the base substrate BS issubstantially non-overlapping with an orthographic projection of aportion of the second anode AD2 in the fourth via V2-1 on the basesubstrate BS; and is substantially non-overlapping with an orthographicprojection of a portion of the second relay electrode RE2 in the thirdvia V2-3 on the base substrate BS; an orthographic projection of aportion of the third anode contact pad ACP3 in the eighth via V3-2 onthe base substrate BS is substantially non-overlapping with anorthographic projection of a portion of the third anode AD3 in theseventh via V3-1 on the base substrate BS; and is substantiallynon-overlapping with an orthographic projection of a portion of thethird relay electrode RE3 in the ninth via V3-3 on the base substrateBS; and an orthographic projection of a portion of the fourth anodecontact pad ACP4 in the eleventh via V4-2 on the base substrate BS issubstantially non-overlapping with an orthographic projection of aportion of the fourth anode AD4 in the tenth via V4-1 on the basesubstrate BS; and is substantially non-overlapping with an orthographicprojection of a portion of the fourth relay electrode RE4 in the twelfthvia V4-3 on the base substrate BS. As used herein, the term“substantially non-overlapping” refers to two orthographic projectionsbeing at least 90 percent (e.g., at least 92 percent, at least 94percent, at least 96 percent, at least 98 percent, at least 99 percent,and 100 percent) non-overlapping.

Optionally, an orthographic projection of the second via V1-2 on thebase substrate BS is substantially non-overlapping with an orthographicprojection of the first via V1-1 on the base substrate BS; and issubstantially non-overlapping with an orthographic projection of thethird via V1-3 on the base substrate BS; an orthographic projection ofthe fifth via V2-2 on the base substrate BS is substantiallynon-overlapping with an orthographic projection of the fourth via V2-1on the base substrate BS; and is substantially non-overlapping with anorthographic projection of the third via V2-3 on the base substrate BS;an orthographic projection of the eighth via V3-2 on the base substrateBS is substantially non-overlapping with an orthographic projection ofthe seventh via V3-1 on the base substrate BS; and is substantiallynon-overlapping with the ninth via V3-3 on the base substrate BS; and anorthographic projection of the eleventh via V4-2 on the base substrateBS is substantially non-overlapping with an orthographic projection ofthe tenth via V4-1 on the base substrate BS; and is substantiallynon-overlapping with an orthographic projection of the twelfth via V4-3on the base substrate BS. By having the above non-overlapping vias, theissue of line open can be substantially obviated. Moreover, the secondplanarization layer PLN2 can be formed with a substantially more evensurface as compared to other array substrates.

FIG. 10 illustrates relative positions between subpixel apertures andvias in an array substrate in some embodiments according to the presentdisclosure. Referring to FIG. 10, the array substrate in someembodiments includes a first anode AD1 in the respective first subpixelsp1, a second anode AD2 in the respective second subpixel sp2, a thirdanode AD3 in the respective third subpixel sp3, and a fourth anode AD4in the respective fourth subpixel sp4. The first anode AD1, the secondanode AD2, the third anode AD3, and the fourth anode AD4, arerespectively anodes of a first light emitting element, a second lightemitting element, a third light emitting element, and a fourth lightemitting element, respectively in the respective first subpixel sp1, therespective second subpixel sp2, the respective third subpixel sp3, andthe respective fourth subpixel sp4. The array substrate in someembodiments further includes a pixel definition layer PDL on a side ofthe first anode AD1, the second anode AD2, the third anode AD3, and thefourth anode AD4 away from the second planarization layer PLN2. Thearray substrate further includes a first subpixel aperture SA1, a secondsubpixel aperture SA2, a third subpixel aperture SA3, a fourth subpixelaperture SA4 respectively extending through the pixel definition layerPDL. Optionally, a first light emitting layer of the first lightemitting element, a second light emitting layer of the second lightemitting element, a third light emitting layer of the third lightemitting element, and a fourth light emitting layer of the fourth lightemitting element respectively connected to a first anode AD1 of thefirst light emitting element, a second anode AD2 of the second lightemitting element, a third anode AD3 of the third light emitting element,and a fourth anode AD4 of the fourth light emitting element,respectively through the first subpixel aperture SA1, the secondsubpixel aperture SA2, the third subpixel aperture SA3, the fourthsubpixel aperture SA4.

In some embodiments, shortest distances between edges of the first anodeother than one having the first via and the first subpixel aperture arenon-uniform. Optionally, shortest distances between edges of the thirdanode other than one having the seventh via and the third subpixelaperture are non-uniform. Optionally, shortest distances between edgesof the fourth anode other than one having the tenth via and the fourthsubpixel aperture are non-uniform.

In some embodiments, a shortest distance d1 between the first via V1-1and the first subpixel aperture SA1 is in a range of 9.0 μm to 15.0 μm,e.g., 9.0 μm to 10.0 μm, 10.0 μm to 11.0 μm, 11.0 μm to 12.0 μm, 12.0 μmto 13.0 μm, 13.0 μm to 14.0 μm, or 14.0 μm to 15.0 μm. Optionally, theshortest distance d1 is 11.7 μm. In some embodiments, a shortestdistance d2 between the fourth via V2-1 and the second subpixel apertureSA2 is in a range of 2.0 μm to 6.0 μm, e.g., 2.0 μm to 3.0 μm, 3.0 μm to4.0 μm, 4.0 μm to 5.0 μm, or 5.0 μm to 6.0 μm. Optionally, the shortestdistance d2 is 3.7 μm. In some embodiments, a shortest distance d3between the seventh via V3-1 and the third subpixel aperture SA3 is in arange of 4.5 μm to 10.5 μm, e.g., 4.5 μm to 5.5 μm, 5.5 μm to 6.5 μm,6.5 μm to 7.5 μm, 7.5 μm to 8.5 μm, 8.5 μm to 9.5 μm, or 9.5 μm to 10.5μm. Optionally, the shortest distance d3 is 7.4 μm. In some embodiments,a shortest distance d4 between the tenth via V4-1 and the fourthsubpixel aperture SA4 is in a range of in a range of 2.0 μm to 6.0 μm,e.g., 2.0 μm to 3.0 μm, 3.0 μm to 4.0 μm, 4.0 μm to 5.0 μm, or 5.0 μm to6.0 μm. Optionally, the shortest distance d4 is 3.4 μm. By spacing apartthe respective via and the respective subpixel aperture, an enhancedsurface evenness of the respective anode can be achieved.

Referring to FIG. 10, in some embodiments, the first via V1-1, thesecond via V1-2, and the third via V1-3 are arranged along a directionsubstantially parallel to the second direction DR2; the fourth via V2-1,the fifth via V2-2, and the sixth via V2-3 are arranged along adirection substantially parallel to the second direction DR2; the eighthvia V3-2 and the ninth via V3-3 are arranged along a directionsubstantially parallel to the second direction DR2; the tenth via V4-1,the eleventh via V4-2, and the twelfth via V4-3 are arranged along adirection substantially parallel to the second direction DR2. However,the seventh via V3-1 and the eighth via V3-2 are arranged along adirection at an inclined angle greater than 15 degree with respect tothe second direction DR2.

Referring to FIG. 10, FIG. 3G, and FIG. 9A to FIG. 9E, in someembodiments, the first anode contact pad ACP1 has a first portionconnected to the first anode ΔD through the first via V-1, a secondportion connected to the first relay electrode RE through the second viaV-2; the first anode contact pad ACP1 has a substantially rectangularshape with the first portion and the second portion arranged along adirection substantially parallel to the second direction DR2.Optionally, the second anode contact pad ACP2 has a third portionconnected to the second anode AD2 through the fourth via V2-1, a fourthportion connected to the second relay electrode RE2 through the fifthvia V2-2; the second anode contact pad ACP2 has a substantiallyrectangular shape with the third portion and the fourth portion arrangedalong a direction substantially parallel to the second direction DR2.Optionally, the third anode contact pad ACP3 has a fifth portionconnected to the third anode AD3 through the seventh via V3-1, a sixthportion connected to the third relay electrode RE3 through the eighthvia V3-2; the third anode contact pad ACP3 has a substantially dumbbellshape with the fifth portion and the sixth portion arranged along adirection at an inclined angle greater than 15 degree with respect tothe second direction DR2. Optionally, the fourth anode contact pad ACP4has a seventh portion connected to the fourth anode AD4 through thetenth via V4-1, an eighth portion connected to the fourth relayelectrode RE4 through the eleventh via V4-2; the fourth anode contactpad ACP4 has a substantially rectangular shape with the seventh portionand the eighth portion arranged along a direction substantially parallelto the second direction DR2.

FIG. 11 illustrates a partial structure of a voltage supply line in someembodiments according to the present disclosure. Referring to FIG. 11,the voltage supply lines Vdd in some embodiments includes a firstparallel portion PA1, a second parallel portion PA2, a third parallelportion PA3, a first inclined portion INP1 connecting the first parallelportion PA1 and the second parallel portion PA2 along a first inclineddirection IDR1, and a second inclined portion INP2 connecting the secondparallel portion PA2 and the third parallel portion PA3 along a secondinclined direction IDR2. The first parallel portion PA1, the secondparallel portion PA2, and the third parallel portion PA3, respectivelyextend along a direction substantially parallel to the second directionDR2. The first inclined portion INP1 extends along a first inclinedangle α1 with respect to the first direction DR1. The second inclinedportion INP2 extends along a second inclined angle α2 with respect tothe first direction DR2. Optionally, the first inclined angle α1 and thesecond inclined angle α2 are supplementary angles, e.g., α1+α2=180degrees. The first connecting portion INP1 extends along a directionsubstantially parallel to the first inclined direction IDR1. The secondconnecting portion INP2 extends along a direction substantially parallelto the second inclined direction IDR2. As used herein, the term“substantially parallel” means that an angle is in the range of 0 degreeto approximately 45 degrees, e.g., 0 degree to approximately 5 degrees,0 degree to approximately 10 degrees, 0 degree to approximately 15degrees, 0 degree to approximately 20 degrees, 0 degree to approximately25 degrees, 0 degree to approximately 30 degrees. Optionally, the firstparallel portion PA1 and the third parallel portion PA3 aresubstantially aligned, e.g., along the second direction DR2.

Referring to FIG. 11, FIG. 3A, FIG. 4B, the first connecting portionINP1, the second parallel portion PA2, and the second connecting portionINP2 in combination surround one side of the connecting portion CP,which is connected to a respective one of the plurality of data lines DLthrough a via v4-1 extending through the first planarization layerPLN-1, and connected to a source electrode S2 of the second transistorthrough a via v4-2 extending through the inter-layer dielectric layerILD, the insulating layer IN, and the gate insulating layer GI.

FIG. 12 illustrates a detailed structure of an interference preventingblock in some embodiments according to the present disclosure. Referringto FIG. 3A, FIG. 4B, and FIG. 12, the interference preventing block IPBin some embodiments further includes a base B, a first arm AM1, and asecond arm AM2. The voltage supply line Vdd is connected to the base Bthrough the third main via v3. Optionally, the first arm AM1 includes afirst tip portion TP1 and a first connecting bridge portion CP1connecting the base B and the first tip portion TP1. Optionally, thesecond arm AM2 includes a second tip portion TP2, and a secondconnecting bridge portion CP2 connecting the base B and the second tipportion TP2.

Optionally, the first tip portion TP1 and the first connecting bridgeportion CP1 are arranged along a direction substantially parallel to thesecond direction DR2. Optionally, the second tip portion TP2 and thesecond connecting bridge portion CP2 are arranged along a directionsubstantially parallel to the second direction DR2. Optionally, alongitudinal side of the base B is along a direction substantiallyparallel to the first direction DR1, and a lateral side of the base B isalong a direction substantially parallel to the second direction DR2.

Optionally, the base B has a substantially rectangular shape.Optionally, the first tip portion TP1 has a substantially rectangularshape. Optionally, the second tip portion TP2 has a substantiallyrectangular shape. Optionally, the first connecting bridge portion CP1has a pseudo half trapezoidal shape. Optionally, the second connectingbridge portion CP2 has a pseudo trapezoidal shape.

In order to more clearly describe a shape and size relationship of thesubpixel aperture, the anode electrode and the light emitting functionallayer, a plan structure view is illustrated in FIG. 13 below. FIG. 13schematically illustrates several repeating units respectively arrangedin two repeating unit groups. For clarity of illustration, two secondsubpixels, two third subpixels and four first subpixels in the left ofFIG. 13 schematically illustrate the structures of the subpixelaperture, the anode electrode and the light emitting functional layer;and two second subpixels, two third subpixels and four first subpixelsin the right of FIG. 13 only illustrate the light emitting functionallayer and the subpixel aperture. As illustrated in FIG. 13, the firstsubpixel comprises the corresponding subpixel aperture, the anodeelectrode 411, and the light emitting functional layer 611, the secondsubpixel comprises the corresponding subpixel aperture, the anodeelectrode 412, and the light emitting functional layer 612; and thethird subpixel comprises the corresponding subpixel aperture, the anodeelectrode 413 and the light emitting functional layer 613. In eachsubpixel (the first subpixel, the second subpixel and the thirdsubpixel), an area of the light emitting functional layer is thelargest, an area of the anode electrode is less than that of the lightemitting functional layer, and an area of the subpixel aperture is thesmallest. An orthographic projection of the subpixel aperture on a planedefined by the first direction DR1 and the second direction DR2 fallswithin an orthographic projection of the anode electrode on the plane.The orthographic projections of the anode electrodes of the firstsubpixel, the second subpixel and the third subpixel on the plane fallswithin orthographic projections of the light emitting functional layersin the corresponding first subpixel, the corresponding second subpixeland the corresponding third subpixel on the plane.

As illustrated in FIG. 13, two opposite edges of the apertures of thepixel definition layer of the two first subpixels in the first subpixelpair extend in the first direction DR1, that is the two opposite edgesare parallel to each other, and distances between the two edges areequal at different positions, so that the maximum light emitting areacan be ensured.

For example, as shown in FIG. 13, the subpixel apertures of any adjacenttwo of the first subpixel, the second subpixel and the third subpixelhave approximately parallel opposite edges, and a perpendicular bisectorof one edge of the opposite edges passes through the other edge. In someexamples, the length of the connection line of centers of the twoopposite edges is the minimum distance between the two opposite edges.At both sides of the centers, the space between the two opposite edgescan be gradually increased. For example, the largest space between thetwo opposite edges can be 1.5 times of the minimum distance between thetwo opposite edges.

As illustrated in subpixels of which the anode electrode is not shown inthe right portion of FIG. 13, in each of the second subpixel 12 and thethird subpixel 13, the light emitting functional layer comprises anannular portion 1220 and 1320 located on the pixel definition layersurrounding the corresponding subpixel aperture; and in the firstsubpixel pair (the two first subpixels 11), the light emittingfunctional layer 611 comprises an annual portion 1120 located on thepixel definition layer surrounding the corresponding subpixel apertureof the two first subpixels and a connection portion 1130 (see the dottedline frame between the two first subpixels in FIG. 13) located on thepixel definition layer between the two subpixel apertures. In each ofthe first subpixel pair, the second subpixel and the third subpixel, theannular portion of the light emitting functional layer has an equalwidth (i.e., Pg1, Pg2 and Pg3) at different location. For example, thewidth Pg1 is equal to the width Pg2 and the width Pg3, respectively.

Furthermore, it should be noted that, in one repeating unit, the twofirst subpixels 11 form a subpixel pair, and the light emittingfunctional layers of the two first subpixels 11 can be formed by onemask opening. In a case that the light emitting functional layers of thetwo first subpixels 11 are formed by one opening, the difficulty inmanufacturing FMM is reduced, and the manufacturing efficiency isimproved. In this case, at least the annular portion and the connectionportion of the light emitting functional layer of the first subpixelpair are a continuous layer structure. As shown in FIG. 13, the annularportion 1120 and the connection portion 1130 of the light emittingfunctional layer of the first subpixel pair can have a planar shape of“θ”. In some embodiments, the light emitting functional layers of thetwo first subpixels are integrally formed, and distributed on the pixeldefinition layer and in the subpixel aperture, and the light emittingfunctional layer on the pixel definition layer and the light emittingfunctional layer in the subpixel aperture of the pixel definition layerare also connected to each other. However, the embodiments according tothe present disclosure are not limited thereto, the light emittingfunctional layer on the pixel definition layer and the light emittingfunctional layer in the subpixel aperture of the pixel definition layercan also be disconnected from each other.

Furthermore, the anode electrodes of the two first subpixels in thefirst subpixel pair are spaced apart from each other; therefore, the twofirst subpixels can be independently driven.

In addition, as illustrated in FIG. 13, the anode electrode needs toconnect to the driving circuit below through a via hole; therefore, ananode via hole 52 need to be provided in the planarization layer. In therepeating unit in the upper left corner in FIG. 13, the anode electrodeof the lower one first subpixel of the first subpixel pair is connectedto a first anode via hole 5211 through a connection pattern 400, theanode electrode of the second subpixel 12 is connected to a third anodevia hole 5213 through the connection pattern 400, and the anodeelectrode of the third subpixel 13 is connected to a fourth anode viahole 5214 through the connection pattern 400. The three anode via holes(5211, 5213 and 5214) are substantially in a straight line parallel tothe first direction DR1. That is, the three anode via holes are allformed on the lower side of the upper repeating unit group and arearranged in the straight line parallel to the first direction DR1.Furthermore, for the upper one first subpixel 11 in the first subpixelpair, its anode electrode is connected to a second anode via hole 5212located above through the connection electrode 400. For example, theconnection situation of the upper first subpixel of the first subpixelpair in the lower left corner in FIG. 13 can be referred to. That is,for each repeating unit group, the anode via holes of the secondsubpixel, the third subpixel and one first subpixel located on the lowerside of the first subpixel pair are located on the lower side of therepeating unit group and are located on substantially the same straightline. The anode via hole of one first subpixel located on the upper sideof the first subpixel pair in the repeating unit group is located abovethe repeating unit group, and is located on the same straight line withthe anode via holes of the second subpixel and the third subpixel of arepeating unit group adjacent to the upper side of the repeating unitgroup.

For example, as shown in FIG. 13, the space between the anode via hole5213 and the anode via hole 5214 of the adjacent second and thirdsubpixels is larger than the space between the adjacent anode via hole5211 and anode via hole 5213. In this case, the anode via hole 5212 ofthe first subpixel in the next repeating unit group can be placedbetween the anode via hole 5213 and the anode via hole 5214.

For example, the anode via holes arranged along one straight line arerepeatedly arranged in sequence according to an order of the anode viahole 5211, the anode via hole 5213, the anode via hole 5212 and theanode via hole 5214.

Although the anode electrodes 411, 412, 413 and the connection electrode400 use different shadow pattern in FIG. 13, the anode electrodes 411,412, 413 can be integrally formed with the corresponding connectionelectrodes, respectively, i.e., formed into an integral structure. Forexample, each of the connection electrodes can be formed simultaneouslywith the corresponding connection electrode by depositing a conductivelayer (e.g., metal layer) and patterning it.

Furthermore, as can be seen from FIG. 13, the connection electrode(connection electrode) 400 of each subpixel electrically connected tothe anode electrode can overlap with the light emitting functionallayer, or can protrude beyond the region of the light emittingfunctional layer, which can be arbitrarily adjusted according to theposition of the via hole.

In some embodiments, the light emitting functional layer 60 can comprisea hole transport layer, a light emitting layer and an electron transportlayer, but are not limited thereto. For different subpixels, forexample, the hole transport layers can have different thicknesses. Forexample, the hole transport layer of the second subpixel has thesmallest thickness, the hole transport layer of the third subpixel hasthe largest thickness, and the thickness of the hole transport layer ofthe first subpixel is between the two. For example, different holetransport layers of different subpixels can adopt the same material buthave different thicknesses; therefore, an entire thin layer of the holetransport layer can be firstly evaporated by using an open mask, andthen fine metal mask (FMM) of the third subpixel and the first subpixelare respectively used for evaporation to reach respective hole transportlayer thicknesses. For the light emitting layer, evaporation isrespectively performed by using respective evaporation masks to obtainrespective light-emitting layers. For the electron transport layer, theopen mask can also be used to evaporate. Therefore, in a process ofmanufacturing a light emitting diode pixel, five FMM evaporation maskprocesses can be adopted. For example, for some layers of the lightemitting functional layer, the layers can be integrally formed for theplurality of subpixels, for example, the layers can be evaporated byusing the abovementioned open mask. However, in order to clearlydescribe, the shape and size of the light emitting functional layerdescribed in the present application are all parts of the patternedlight emitting functional layer of each subpixel or subpixel pair formedby FMM.

In some embodiments, a cathode, a lithium fluoride layer, a lightextraction layer and a lithium fluoride layer can be further providedabove the light emitting functional layer 60. For example, the cathodecan be formed by a transparent conductive material such as ITO. Theintroduction of lithium fluoride can better modify the ITO surface,reduce the formation of the interface defect state, and enhance thestability of the device. The light extraction layer can improve thelight extraction efficiency of the light emitting diode.

Furthermore, as can be seen from FIG. 13, in the same repeating unitgroup, the light emitting functional layers of adjacent subpixels in thefirst direction DR1 are adjacent to each other. That is, there can be nospace between two adjacent light emitting functional layers in the firstdirection DR1. For example, in order to ensure that the light emittingfunctional layer in the subpixel aperture manufactured by FMM process isuniform as possible, and considering the process margin, the FMM openingfor manufacturing the light emitting functional layer is as large aspossible, but the light emitting functional layers of adjacent subpixelswith different colors is better not to overlap as much as possible toavoid color mixing, thus, the FMM opening can be designed according to acase that the light emitting functional layers of adjacent subpixelsabut with each other. But in actual process, because of process errorsand other reasons, a shadow region of layers formed by FMM may havecertain overlap or spacing, the formed light emitting functional layersof adjacent subpixels may have overlapping parts with each other.However, through process control, the size of the overlapping parts canbe smaller than 1/10 or even smaller than 1/20 of the size of the lightemitting functional layer. In addition, as described above, the edge ofthe subpixel aperture of each pixel has an equal distance with the edgeof the light emitting functional layer, for example, Pg1=Pg2=Pg3.Therefore, in the first direction DR1, a boundary line of the lightemitting functional layers of adjacent two subpixels is located in themiddle of the interval between the subpixel apertures of the adjacenttwo subpixels. In this case, the shape of the light emitting functionallayer of each subpixel can be calculated. For example, the area of thelight emitting functional layer of the first subpixel pair is greaterthan the area of the light emitting functional layer of the secondsubpixel, and the area of the light emitting functional layer of thesecond subpixel is greater than the area of the light emittingfunctional layer of the third subpixel. For example, the first subpixelis a green subpixel, the second subpixel is a blue subpixel, and thethird subpixel is a red subpixel. In addition, the light emittingfunctional layers of the first subpixel pair and the second subpixeladjacent in the second direction DR2 abut with each other, the lightemitting functional layers of the third subpixel and the first subpixelpair adjacent in the second direction DR2 are spaced apart from eachother, and the light emitting functional layers of the third subpixeland the second subpixel adjacent in the second direction DR2 are spacedapart from each other. In addition, as can be seen from FIG. 13, theinterval between the light emitting functional layers of the thirdsubpixel and the second subpixel adjacent in the second direction DR2 isgreater than the interval between the light emitting functional layersof the third subpixel and the first subpixel pair adjacent in the seconddirection DR2. In the second direction DR2, the size of the lightemitting functional layer of one first subpixel pair is greater than thesize of the light emitting functional layer of one second subpixel andgreater than the size of the light emitting functional layer of onethird subpixel; in the first direction DR1, both of the size of thelight emitting functional layer of one first subpixel pair and the sizeof the light emitting functional layer of one second subpixel aregreater than the size of the light emitting functional layer of onethird subpixel. For the shape and area of the light emitting functionallayer designed according to the above rules, the process can besimplified and light emitting area can be maximized.

For example, as illustrated in FIG. 13, a minimum distance between thesubpixel apertures of the two first subpixels of the first subpixel pairis smaller than a minimum distance between any two of the subpixelaperture of the first subpixel pair, the subpixel aperture of the secondsubpixel and the subpixel aperture of the third subpixel. For example, aminimum distance between the subpixel aperture of the first subpixelpair and the subpixel aperture of the second subpixel is a firstdistance, a minimum distance between the subpixel aperture of the firstsubpixel pair and the subpixel aperture of the third subpixel is asecond distance, a minimum distance between the subpixel aperture of thesecond subpixel and the subpixel aperture of the third subpixel is athird distance, a minimum distance between the subpixel apertures of thetwo first subpixels in the first subpixel pair is a fourth distance, thefirst distance, the second distance and the third distance are allgreater than the fourth distance. For example, a difference between thefirst distance and the second distance is less than 20% of the firstdistance, and the difference between the first distance and the thirddistance is less than 20% of the first distance. In a case of full highdefinition (FHD) resolution, a distance between the subpixel aperturesof adjacent subpixels can be 22˜25 μm; in a case of a quarter fulldefinition (QHD) resolution, a distance between the subpixel aperturesof adjacent subpixels can be 19.7˜21.5 μm. For example, theabovementioned distance can be in a range of 18˜26 μm. The distancebetween the adjacent subpixels as mentioned above refer to a distancebetween subpixels of different colors. For the two subpixels in thefirst subpixel pair, the distance between the subpixel apertures can be15 μm in the case of full high definition (FHD) resolution, and 14 μm inthe case of a quarter full definition (QHD) resolution. For example, thedistance between the subpixel apertures of the two first subpixels canbe in the range of 13˜16 μm. Furthermore, for the size of the subpixelaperture of each subpixel, the minimum size is 8 μm. That is, the sizeof the subpixel apertures of each subpixel is greater than or equal to 8μm.

For the subpixel apertures of subpixels having different colors, thearea of the subpixel aperture of the second subpixel is the maximum, thearea of the subpixel aperture of the first subpixel is the minimum, andthe area of the subpixel aperture of the third subpixel is between thetwo. Optionally, the first subpixel is the green subpixel, the secondsubpixel is the blue subpixel, and the third subpixel is the redsubpixel.

In addition, for example, the minimum distance between the anodeelectrodes of the two first subpixel in the first subpixel pair can bein the range of 8˜15 μm. In this case, a wire having a line width ofabout 5 μm can be disposed between the anode electrodes of the two firstsubpixels.

The design structure of the abovementioned light emitting functionallayer and the subpixel aperture can take into consideration the displayeffect of subpixels of various colors, and realize the most compactarrangement.

In some embodiments, two subpixels of the respective first subpixel, therespective second subpixel, the respective third subpixel, and therespective fourth subpixel are subpixels of a same color (e.g., greencolor). In one example, the respective second subpixel sp2 and therespective fourth subpixel sp4 are subpixels of a same color (e.g.,green color). In some embodiments, two light emitting elements of thefirst light emitting element, the second light emitting element, thethird light emitting element, and the fourth light emitting element arelight emitting elements of a same color (e.g., green color). In oneexample, the second light emitting element and the fourth light emittingelement are light emitting elements of a same color (e.g., green color).In some embodiments, anodes of the two light emitting elements of thesame color have different areas or different shapes. In one example, thesecond anode AD2 and the fourth anode AD4 have different areas ordifferent shapes.

FIG. 14 illustrates structural difference between a second anode and afourth anode in some embodiments according to the present disclosure.FIG. 14 illustrates a second anode AD2, a fourth anode AD4, and asuperimposition of the second anode AD2 and the fourth anode AD4. Insome embodiments, the second anode AD2 includes a first main portion MP1and a first extra portion EP1; the fourth anode AD4 includes a secondmain portion MP2, a second extra portion EP2, a third extra portion EP3,a fourth extra portion EP4, and a fifth extra portion EP5.

In some embodiments, the first main portion MP1 is a combination of arectangle part and a triangle part, and the second main portion MP2 is acombination of a rectangle part and a triangle part. Optionally, thefirst main portion MP1 and the second main portion MP2 havesubstantially same shape (and dimensions). Optionally, the first extraportion EP1 abuts the triangle part of the first main portion MP1.Optionally, the second extra portion EP2 abuts a side of the rectanglepart of the second main portion MP2 away from the triangle part of thesecond main portion MP2. Optionally, the third extra portion EP3 abutsthe triangle part of the second main portion MP2. Optionally, the thirdextra portion EP3 connects the fourth extra portion EP4 to the secondmain portion MP2, and the fourth extra portion EP4 connects the fifthextra portion EP5 to the third extra portion EP3.

Optionally, the second extra portion EP2, the second main portion MP2,the third extra portion EP3, the fourth extra portion EP4, and the fifthextra portion EP5 are sequentially arranged along a directionsubstantially parallel to the second direction DR2. Optionally, thefourth extra portion EP4 extends along a direction at a third inclinedangle γ greater than zero with respect to the second direction DR2.

In another aspect, the present disclosure provides a display panelincluding the array substrate described herein or fabricated by a methoddescribed herein, and a counter substrate facing the array substrate.Optionally, the display panel is an organic light emitting diode displaypanel. Optionally, the display panel is micro light emitting diodedisplay panel.

In another aspect, the present invention provides a display apparatus,including the array substrate described herein or fabricated by a methoddescribed herein, and one or more integrated circuits connected to thearray substrate.

In another aspect, the present disclosure provides a method offabricating an array substrate. In some embodiments, the method includesforming a plurality of light emitting elements respectively in aplurality of subpixels; and forming a plurality of pixel drivingcircuits respectively in the plurality of subpixels configured torespectively drive the plurality of light emitting elements. Optionally,forming the plurality of light emitting elements includes forming afirst light emitting element in a respective first subpixel, forming asecond light emitting element in a respective second subpixel, forming athird light emitting element in a respective third subpixel, and forminga fourth light emitting element in a respective fourth subpixel.Optionally, forming a respective one of the plurality of pixel drivingcircuits includes forming a plurality of transistors, and forming astorage capacitor. Optionally, forming the storage capacitor includesforming a first capacitor electrode, forming a second capacitorelectrode electrically connected to a respective voltage supply line,and forming an insulating layer. The insulating layer is formed betweenthe first capacitor electrode and the second capacitor electrode.Optionally, forming the array substrate includes forming a semiconductormaterial layer on the base substrate; and forming a node connecting linein a same layer as the respective voltage supply line. The nodeconnecting line is formed to be connected to the first capacitorelectrode through a first main via, and formed to be connected to thesemiconductor material layer through a second main via. Optionally, anorthographic projection of a first anode of the first light emittingelement in the respective first subpixel on the base substrate at leastpartially overlaps with an orthographic projection of a node connectingline in the respective first subpixel on the base substrate; anorthographic projection of the second anode in the respective secondsubpixel on the base substrate at least partially overlaps with anorthographic projection of the node connecting line in the respectivesecond subpixel on the base substrate; an orthographic projection of thethird anode in the respective third subpixel on the base substrate atleast partially overlaps with an orthographic projection of the nodeconnecting line in the respective third subpixel on the base substrate;and an orthographic projection of the fourth anode in the respectivefourth subpixel sp4 on the base substrate at least partially overlapswith an orthographic projection of the node connecting line in therespective fourth subpixel on the base substrate.

In some embodiments, forming the plurality of transistors includesforming a driving transistor. Optionally, the orthographic projection ofthe first anode in the respective first subpixel on the base substratecovers an orthographic projection of a portion of the node connectingline at a position connecting to a first capacitor electrode in therespective first subpixel on the base substrate; the orthographicprojection of the second anode in the respective second subpixel on thebase substrate covers an orthographic projection of a portion of thenode connecting line at a position connecting to a first capacitorelectrode Ce1 in the respective second subpixel on the base substrate;the orthographic projection of the third anode in the respective thirdsubpixel on the base substrate covers an orthographic projection of aportion of the node connecting line at a position connecting to a firstcapacitor electrode Ce1 in the respective third subpixel on the basesubstrate; and the orthographic projection of the fourth anode in therespective fourth subpixel on the base substrate covers an orthographicprojection of a portion of the node connecting line at a positionconnecting to a first capacitor electrode Ce1 in the respective fourthsubpixel on the base substrate.

In some embodiments, the orthographic projection of the third anode onthe base substrate at least partially overlaps with an orthographicprojection of a third transistor in the respective third subpixel on thebase substrate and at least partially overlaps with an orthographicprojection of a third transistor in the respective fourth subpixeladjacent to the respective third subpixel on the base substrate.

In some embodiments, the orthographic projection of the third anode onthe base substrate covers an orthographic projection of a sourceelectrode of a third transistor in the respective third subpixel on thebase substrate, partially overlaps with an orthographic projection of anactive layer of the third transistor in the respective third subpixel onthe base substrate, and partially overlaps with an orthographicprojection of an active layer of the third transistor in the respectivefourth subpixel on the base substrate.

In some embodiments, the orthographic projection of the first anode onthe base substrate at least partially overlaps with an orthographicprojection of a third transistor in the respective first subpixel on thebase substrate.

In some embodiments, the orthographic projection of the first anode onthe base substrate partially overlaps with an orthographic projection ofa source electrode of the third transistor in the respective firstsubpixel on the base substrate, and partially overlaps with anorthographic projection of an active layer of the third transistor inthe respective first subpixel on the base substrate.

In some embodiments, the orthographic projection of the fourth anode onthe base substrate at least partially overlaps with an orthographicprojection of a third transistor in the respective second subpixel onthe base substrate.

In some embodiments, the orthographic projection of the fourth anode onthe base substrate partially overlaps with an orthographic projection ofa source electrode of the third transistor in the respective secondsubpixel on the base substrate, and partially overlaps with anorthographic projection of an active layer of the third transistor inthe respective second subpixel on the base substrate.

In some embodiments, the method further includes forming a gateinsulating layer on a side of the semiconductor material layer away fromthe base substrate; forming an insulating layer on a side of the gateinsulating layer away from the base substrate; forming an inter-layerdielectric layer on a side of the insulating layer away from the gateinsulating layer; forming a relay electrode layer on a side of theinter-layer dielectric layer away from the insulating layer; forming afirst planarization layer on a side of the relay electrode layer awayfrom the inter-layer dielectric layer; forming an anode contact padlayer on a side of the first planarization layer away from theinter-layer dielectric layer; and forming a second planarization layeron side of the anode contact pad layer away from the first planarizationlayer. Optionally, the pixel definition layer is formed on a side of thesecond planarization layer away from the base substrate; the spacerlayer is formed on a side of the pixel definition layer away from thesecond planarization layer; and respective anodes are formed on a sideof the second planarization layer away from the first planarizationlayer; and respective light emitting layers are on a side of therespective anodes away from the second planarization layer. Optionally,in the respective first subpixel, the first anode is formed to beconnected to a first anode contact pad through a first via extendingthrough the second planarization layer, the first anode contact pad isconnected to a first relay electrode through a second via extendingthrough the first planarization layer, and the first relay electrode isconnected to a drain electrode of a fifth transistor in the respectivefirst subpixel through a third via extending through the inter-layerdielectric layer, the insulating layer, and the gate insulating layer.Optionally, in the respective second subpixel, the second anode isformed to be connected to a second anode contact pad through a fourthvia extending through the second planarization layer, the second anodecontact pad is connected to a second relay electrode through a fifth viaextending through the first planarization layer, and the second relayelectrode is connected to a drain electrode of the fifth transistor inthe respective second subpixel through a sixth via extending through theinter-layer dielectric layer, the insulating layer, and the gateinsulating layer. Optionally, in the respective third subpixel, thethird anode is formed to be connected to a third anode contact padthrough a seventh via extending through the second planarization layer,the third anode contact pad is connected to a third relay electrodethrough an eighth via extending through the first planarization layer,and the third relay electrode is connected to a drain electrode of thefifth transistor in the respective third subpixel through a ninth viaextending through the inter-layer dielectric layer, the insulatinglayer, and the gate insulating layer. Optionally, in a respective fourthsubpixel, the fourth anode is formed to be connected to a fourth anodecontact pad through a tenth via extending through the secondplanarization layer, the fourth anode contact pad is connected to afourth relay electrode through an eleventh via extending through thefirst planarization layer, and the fourth relay electrode is connectedto a drain electrode of the fifth transistor in the respective fourthsubpixel through a twelfth via extending through the inter-layerdielectric layer, the insulating layer, and the gate insulating layer.

In some embodiments, an orthographic projection of a portion of thefirst anode contact pad in the second via on the base substrate issubstantially non-overlapping with an orthographic projection of aportion of the first anode in the first via on the base substrate, andis substantially non-overlapping with an orthographic projection of aportion of the first relay electrode in the third via on the basesubstrate; an orthographic projection of a portion of the second anodecontact pad in the fifth via on the base substrate is substantiallynon-overlapping with an orthographic projection of a portion of thesecond anode in the fourth via on the base substrate, and issubstantially non-overlapping with an orthographic projection of aportion of the second relay electrode in the third via on the basesubstrate; an orthographic projection of a portion of the third anodecontact pad in the eighth via on the base substrate is substantiallynon-overlapping with an orthographic projection of a portion of thethird anode in the seventh via on the base substrate, and issubstantially non-overlapping with an orthographic projection of aportion of the third relay electrode in the ninth via on the basesubstrate; and an orthographic projection of a portion of the fourthanode contact pad in the eleventh via on the base substrate issubstantially non-overlapping with an orthographic projection of aportion of the fourth anode in the tenth via on the base substrate, andis substantially non-overlapping with an orthographic projection of aportion of the fourth relay electrode in the twelfth via on the basesubstrate.

In some embodiments, counter-clock wise, a respective third anode isadjacent to a first respective fourth anode, a first respective firstanode, a first respective second anode, a second respective first anode,a second respective fourth anode, a second respective second anode, anda third respective first anode. Optionally, clock wise, a respectivethird anode is adjacent to a first respective fourth anode, a firstrespective first anode, a first respective second anode, a secondrespective first anode, a second respective fourth anode, a secondrespective second anode, and a third respective first anode. Optionally,a shortest distance between the respective third anode and any one ofthe first respective fourth anode, the first respective first anode, thefirst respective second anode, the second respective first anode, avirtual line passing through co-linear edges respectively from thesecond respective fourth anode and the second respective second anode,or the third respective first anode is in a range of 2.0 μm to 22 μm.Optionally, a shortest distance between the respective third anode andthe first respective fourth anode is less than a shortest distancebetween the respective third anode and the third respective first anode,less than a shortest distance between the respective third anode and thefirst respective first anode, less than a shortest distance between therespective third anode and the second respective first anode, less thana shortest distance between the respective third anode and a virtualline passing through co-linear edges respectively from the secondrespective fourth anode and the second respective second anode, and lessthan a shortest distance between the respective third anode and thefirst respective second anode. Optionally, a shortest distance betweenthe respective third anode and the third respective first anode isgreater than a shortest distance between the respective third anode andthe first respective first anode, which is greater than a shortestdistance between the respective third anode and the second respectivefirst anode, which is greater than a shortest distance between therespective third anode and a virtual line passing through co-linearedges respectively from the second respective fourth anode and thesecond respective second anode, which is greater than a shortestdistance between the respective third anode and the first respectivesecond anode, which is greater than a shortest distance between therespective third anode and the first respective fourth anode.Optionally, a shortest distance between the respective third anode andthe first respective fourth anode is in a range of 2.0 μm to 5.0 μm; ashortest distance between the respective third anode and the firstrespective first anode is in a range of 8.0 μm to 20.0 μm; a shortestdistance between the respective third anode and the first respectivesecond anode is in a range of 5.0 μm to 15.0 μm; a shortest distancebetween the respective third anode and the second respective first anodeis in a range of 7.0 μm to 17.0 μm; a shortest distance between therespective third anode and a virtual line passing through co-linearedges respectively from the second respective fourth anode and thesecond respective second anode is in a range of 5.0 μm to 16.0 μm; and ashortest distance between the respective third anode and the thirdrespective first anode is in a range of 9.0 μm to 22.0 μm.

In some embodiments, counter-clock wise, a respective first anode isadjacent to a first respective second anode, a first respective fourthanode, a first respective third anode, a second respective second anode,a second respective third anode, a second respective fourth anode, and athird respective third anode. Optionally, clock wise, a respective firstanode is adjacent to a first respective second anode, a first respectivefourth anode, a first respective third anode, a second respective secondanode, a second respective third anode, a second respective fourthanode, and a third respective third anode. Optionally, a shortestdistance between the respective first anode and any one of the firstrespective second anode, the first respective fourth anode, the firstrespective third anode, the second respective second anode, the secondrespective third anode, the second respective fourth anode, or the thirdrespective third anode in in a range of 3.0 μm to 25 μm. Optionally, ashortest distance between the respective first anode and the secondrespective fourth anode is less than a shortest distance between therespective first anode and the second respective second anode, less thana shortest distance between the respective first anode and the firstrespective fourth anode, less than a shortest distance between therespective first anode and the first respective third anode, less than ashortest distance between the respective first anode and the secondrespective third anode, less than a shortest distance between therespective first anode and the third respective third anode, and lessthan a shortest distance between the respective first anode and thefirst respective second anode. Optionally, a shortest distance betweenthe respective first anode and the second respective second anode isgreater than a shortest distance between the respective first anode andthe first respective fourth anode, which is greater than a shortestdistance between the respective first anode and the first respectivethird anode, which is greater than a shortest distance between therespective first anode and the second respective third anode, which isgreater than a shortest distance between the respective first anode andthe third respective third anode, which is greater than a shortestdistance between the respective first anode and the first respectivesecond anode, which is greater than a shortest distance between therespective first anode and the second respective fourth anode.Optionally, a shortest distance between the respective first anode andthe first respective second anode is in a range of 3.0 μm to 14.0 μm; ashortest distance between the respective first anode and the firstrespective fourth anode is in a range of 10.0 μm to 24.0 μm; a shortestdistance between the respective first anode and the first respectivethird anode is in a range of 9.0 μm to 21.0 μm; a shortest distancebetween the respective first anode and the second respective secondanode is in a range of 11.0 μm to 25.0 μm; a shortest distance betweenthe respective first anode and the second respective third anode is in arange of 8.0 μm to 20.0 μm; a shortest distance between the respectivefirst anode and the second respective fourth anode is in a range of 2.5μm to 7.5 μm; and a shortest distance between the respective first anodeand the third respective third anode is in a range of 7.0 μm to 16.0 μm.

In some embodiments, counter-clock wise, a respective fourth anode isadjacent to a respective second anode, a first respective third anode, afirst respective first anode, a second respective third anode, and asecond respective first anode. Optionally, clock wise, a respectivefourth anode is adjacent to a respective second anode, a firstrespective third anode, a first respective first anode, a secondrespective third anode, and a second respective first anode. Optionally,a shortest distance between the respective fourth anode and any one ofthe first respective first anode, the second respective third anode, orthe second respective first anode is in a range of 2.0 μm to 25.0 μm.Optionally, a shortest distance between the respective fourth anode andthe second respective first anode is greater than a shortest distancebetween the respective fourth anode and the first respective firstanode, and greater than a shortest distance between the respectivefourth anode and the second respective third anode. Optionally, adistance between the respective fourth anode and the respective secondanode, and along a virtual line passing through co-linear edgesrespectively from the respective fourth anode and the respective secondanode, is in a range of 10.0 μm to 25.0 μm; a shortest distance betweenthe first respective third anode and a virtual line passing throughco-linear edges respectively from the respective fourth anode and therespective second anode is in a range of 6.0 μm to 15.0 μm; a shortestdistance between a protrusion portion of the first respective firstanode that is closest to the respective fourth anode, and the virtualline passing through the co-linear edges respectively from therespective fourth anode and the respective second anode is in a range of5.0 μm to 16.0 μm; a shortest distance between the respective fourthanode and the first respective first anode is in a range of 2.5 μm to7.5 μm; a shortest distance between the respective fourth anode and thesecond respective third anode is in a range of 2.0 μm to 5.0 μm; and ashortest distance between the respective fourth anode and the secondrespective first anode is in a range of 10.0 μm to 25.0 μm.

In some embodiments, the method further includes forming a firstsubpixel aperture, a second subpixel aperture, a third subpixelaperture, a fourth subpixel aperture respectively extending through thepixel definition layer. A first light emitting layer of the first lightemitting element, a second light emitting layer of the second lightemitting element, a third light emitting layer of the third lightemitting element, and a fourth light emitting layer of the fourth lightemitting element are formed to be respectively connected to a firstanode of the first light emitting element, a second anode of the secondlight emitting element, a third anode of the third light emittingelement, and a fourth anode of the fourth light emitting element,respectively through the first subpixel aperture, the second subpixelaperture, the third subpixel aperture, the fourth subpixel aperture.Optionally, a shortest distance between the first via and the firstsubpixel aperture is in a range of 9.0 μm to 15.0 μm; a shortestdistance between the fourth via and the second subpixel aperture is in arange of 2.0 μm to 6.0 μm; a shortest distance between the seventh viaand the third subpixel aperture is in a range of 4.5 μm to 10.5 μm; anda shortest distance between the tenth via and the fourth subpixelaperture is in a range of in a range of 2.0 μm to 6.0 μm.

In some embodiments, the orthographic projection of the first anode inthe respective first subpixel on the base substrate at least partiallyoverlaps with an orthographic projection of the first capacitorelectrode in the respective first subpixel on the base substrate; theorthographic projection of the second anode in the respective secondsubpixel on the base substrate at least partially overlaps with anorthographic projection of the first capacitor electrode in therespective second subpixel on the base substrate; an orthographicprojection of the third anode in a respective third subpixel on the basesubstrate at least partially overlaps with an orthographic projection ofthe first capacitor electrode in the respective third subpixel on thebase substrate; and an orthographic projection of the fourth anode in arespective fourth subpixel on the base substrate at least partiallyoverlaps with an orthographic projection of the first capacitorelectrode in the respective fourth subpixel on the base substrate; theorthographic projection of the first anode in a respective firstsubpixel on the base substrate at least partially overlaps with anorthographic projection of the second capacitor electrode in therespective first subpixel on the base substrate; an orthographicprojection of the second anode in a respective second subpixel on thebase substrate at least partially overlaps with an orthographicprojection of the second capacitor electrode in the respective secondsubpixel on the base substrate; an orthographic projection of the thirdanode in a respective third subpixel on the base substrate at leastpartially overlaps with an orthographic projection of the secondcapacitor electrode in the respective third subpixel on the basesubstrate; and an orthographic projection of the fourth anode in arespective fourth subpixel sp4 on the base substrate at least partiallyoverlaps with an orthographic projection of the second capacitorelectrode in the respective fourth subpixel on the base substrate; andthe orthographic projection of the first anode in a respective firstsubpixel on the base substrate at least partially overlaps with anorthographic projection of the active layer of the driving transistor inthe respective first subpixel on the base substrate; an orthographicprojection of the second anode in a respective second subpixel on thebase substrate at least partially overlaps with an orthographicprojection of the active layer of the driving transistor in therespective second subpixel on the base substrate; an orthographicprojection of the third anode in a respective third subpixel on the basesubstrate at least partially overlaps with an orthographic projection ofthe active layer of the driving transistor in the respective thirdsubpixel on the base substrate; and an orthographic projection of thefourth anode in a respective fourth subpixel sp4 on the base substrateat least partially overlaps with an orthographic projection of theactive layer of the driving transistor in the respective fourth subpixelon the base substrate.

In some embodiments, the method further includes forming a spacer layeron a side of the pixel definition layer away from the base substrate.Optionally, forming the spacer layer includes forming first spacersarranged in a first array and forming second spacers arranged in asecond array, the first array and the second array formed to interlacewith each other. Optionally, a respective row of second spacers in thesecond array is formed between two respective rows of first spacers inthe first array; a respective column of second spacers in the secondarray is formed between two respective columns of first spacers in thefirst array; a respective row of first spacers in the first array isformed between two respective rows of second spacers in the secondarray; a respective column of first spacers in the first array is formedbetween two respective columns of second spacers in the second array; arespective one of the first spacers is formed between a second anode ofthe second light emitting element and a third anode of the third lightemitting element; and a respective one of the second spacers is formedbetween the third anode and a fourth anode of the fourth light emittingelement.

In some embodiments, two adjacent first spacers in the respective row offirst spacers are spaced apart by eight subpixels; two adjacent secondspacers in the respective row of second spacers are spaced apart byeight subpixels; two adjacent first spacers in the respective column offirst spacers are spaced apart by six subpixels; and two adjacent secondspacers in the respective column of second spacers are spaced apart bysix subpixels.

In some embodiments, the plurality of subpixels are formed to bearranged in an array of a plurality of rows along a first direction anda plurality of columns along a second direction; the respective row offirst spacers is along the first direction; the respective row of secondspacers is along the first direction; the respective column of firstspacers is along the second direction; and the respective column ofsecond spacers is along the second direction.

In some embodiments, the method further includes forming a first lightemitting layer on a side of a first anode of the first light emittingelement away from the base substrate; forming a second light emittinglayer on a side of the second anode away from the base substrate;forming a third light emitting layer on a side of the third anode awayfrom the base substrate; and forming a fourth light emitting layer on aside of the fourth anode away from the base substrate. Optionally, anorthographic projection of the third light emitting layer on the basesubstrate partially overlaps with an orthographic projection of arespective first spacer on the base substrate; an orthographicprojection of the second light emitting layer on the base substratepartially overlaps with the orthographic projection of the respectivefirst spacer on the base substrate; a first edge of the third lightemitting layer crossing over the respective first spacer issubstantially parallel to a first central line of the respective firstspacer; and a second edge of the second light emitting layer crossingover the respective first spacer is substantially parallel to the firstcentral line of the respective first spacer.

In some embodiments, the first edge is spaced apart from the firstcentral line by a first distance along a direction perpendicular to thefirst central line; the second edge is spaced apart from the firstcentral line by a second distance along the direction perpendicular tothe first central line; and an average value of the first distance alongthe first edge is substantially same as an average value of the seconddistance along the second edge. Optionally, the first edge substantiallyoverlaps with the first central line. Optionally, the second edgesubstantially overlaps with the first central line.

In some embodiments, an orthographic projection of the third lightemitting layer on the base substrate partially overlaps with anorthographic projection of a respective second spacer on the basesubstrate; an orthographic projection of the fourth light emitting layeron the base substrate partially overlaps with the orthographicprojection of the respective second spacer on the base substrate; athird edge of the third light emitting layer crossing over therespective second spacer is substantially parallel to a second centralline of the respective second spacer; and a fourth edge of the fourthlight emitting layer crossing over the respective second spacer issubstantially parallel to the second central line of the respectivesecond spacer.

In some embodiments, the third edge is spaced apart from the secondcentral line by a third distance along a direction perpendicular to thesecond central line; the fourth edge is spaced apart from the secondcentral line by a fourth distance along the direction perpendicular tothe second central line; and an average value of the third distancealong the third edge is substantially same as an average value of thefourth distance along the fourth edge. Optionally, the third edgesubstantially overlaps with the second central line. Optionally, thefourth edge substantially overlaps with the second central line.

The foregoing description of the embodiments of the invention has beenpresented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formor to exemplary embodiments disclosed. Accordingly, the foregoingdescription should be regarded as illustrative rather than restrictive.Obviously, many modifications and variations will be apparent topractitioners skilled in this art. The embodiments are chosen anddescribed in order to explain the principles of the invention and itsbest mode practical application, thereby to enable persons skilled inthe art to understand the invention for various embodiments and withvarious modifications as are suited to the particular use orimplementation contemplated. It is intended that the scope of theinvention be defined by the claims appended hereto and their equivalentsin which all terms are meant in their broadest reasonable sense unlessotherwise indicated. Therefore, the term “the invention”, “the presentinvention” or the like does not necessarily limit the claim scope to aspecific embodiment, and the reference to exemplary embodiments of theinvention does not imply a limitation on the invention, and no suchlimitation is to be inferred. The invention is limited only by thespirit and scope of the appended claims. Moreover, these claims mayrefer to use “first”, “second”, etc. following with noun or element.Such terms should be understood as a nomenclature and should not beconstrued as giving the limitation on the number of the elementsmodified by such nomenclature unless specific number has been given. Anyadvantages and benefits described may not apply to all embodiments ofthe invention. It should be appreciated that variations may be made inthe embodiments described by persons skilled in the art withoutdeparting from the scope of the present invention as defined by thefollowing claims. Moreover, no element and component in the presentdisclosure is intended to be dedicated to the public regardless ofwhether the element or component is explicitly recited in the followingclaims.

1. An array substrate, comprising a plurality of first type data linesand a plurality of second type data lines; wherein a respective one ofthe plurality of first type data lines crosses over subpixel aperturesof multiple subpixels of a first color, and does not crosses oversubpixel apertures of any subpixel of a second color and does notcrosses over subpixel apertures of any subpixel of a third color, thefirst color, the second color, and the third color being three differentcolors; a respective one of the plurality of second type data line doesnot cross over any subpixel aperture; a first plane containing anorthographic projection of the respective one of the plurality of firsttype data lines on a second plane containing a surface of a pixeldefinition layer divides a respective subpixel aperture of a subpixel ofthe first color into a first region and a second region, the first planeorthogonal to the second plane; and a ratio of a first area of the firstregion to a second area of the second region is in a range of 2:8 to8:2.
 2. The array substrate of claim 1, wherein a ratio of a totalnumber of the plurality of first type data lines to a total number ofthe plurality of second type data lines is in a range of 0.2 to
 4. 3.The array substrate of claim 1, further comprising a first anode of afirst light emitting element, the first anode comprising a main portionand a protrusion protruding along a first direction from a side of themain portion; and an orthographic projection of the protrusion on a basesubstrate at least partially overlaps with an orthographic projection ofa semiconductor material portion of a third transistor on the basesubstrate, the semiconductor material portion extending along the firstdirection.
 4. The array substrate of claim 3, wherein an orthographicprojection of the protrusion on the base substrate at least partiallyoverlaps with an orthographic projection of a gate electrode of a thirdtransistor on the base substrate.
 5. The array substrate of claim 1,further comprising a second anode of a second light emitting element,the second anode comprising a main portion and a protrusion protrudingalong a second direction from a side of the main portion; and anorthographic projection of the protrusion on a base substrate at leastpartially overlaps with an orthographic projection of a semiconductormaterial portion of a third transistor on the base substrate, thesemiconductor material portion extending along the first direction. 6.The array substrate of claim 1, further comprising a third anode of athird light emitting element, the third anode comprising a main portion,a first protrusion and a second protrusion respectively protruding alonga first direction from two sides of the main portion; the firstprotrusion and the second protrusion are on a same side of a gate linecontrolling a third transistor; a ratio of a first dimension of thefirst protrusion along the second direction to a second dimension of thesecond protrusion along the second direction is in a range of 0.1 to8.0; and a ratio of a first area of the first protrusion to a secondarea of the second protrusion is in a range of 0.1 to 8.0.
 7. The arraysubstrate of claim 6, wherein a ratio of a first area of the firstprotrusion to a main area of the main portion is in a range of 0.01 to0.1; a ratio of a second area of the second protrusion to a main area ofthe main portion is in a range of 0.02 to 0.2; and the second rea of thesecond protrusion is greater than the first area of the firstprotrusion.
 8. The array substrate of claim 6, wherein an orthographicprojection of the first protrusion on a base substrate at leastpartially overlaps with an orthographic projection of a firstsemiconductor material portion of a third transistor in a first adjacentsubpixel on the base substrate, the first semiconductor material portionextending along the first direction; and an orthographic projection ofthe first protrusion on the base substrate at least partially overlapswith an orthographic projection of a second semiconductor materialportion of the third transistor in a second adjacent subpixel on thebase substrate, the second semiconductor material portion extendingalong the first direction, the first adjacent subpixel and the secondadjacent subpixel directly adjacent to each other.
 9. The arraysubstrate of claim 1, wherein shortest distances between a subpixelaperture and edges of an anode other than an edge wherein the anodeconnects to an anode contact pad are non-uniform; wherein a lightemitting layer connects to the anode through the subpixel apertureextending through a pixel definition layer.
 10. The array substrate ofclaim 1, comprising: a first transistor in a pixel driving circuit in apresent stage; a sixth transistor in a second pixel driving circuit in aprevious stage, wherein the first transistor and the sixth transistorare commonly controlled by a same reset control signal line; a pluralityof first reset signal lines; and an initialization connecting lineconnecting the respective one of the plurality of first reset signallines and a source electrode of the first transistor, the respective oneof the plurality of first reset signal lines configured to provide areset signal to the source electrode of the first transistor, throughthe initialization connecting line; wherein the initializationconnecting line is on a same side of active layers or gate electrodes ofthe first transistor and the sixth transistor along a first direction.11. The array substrate of claim 1, further comprising: a firstplanarization layer; a first data line and a balancing block on thefirst planarization layer, wherein the balancing block beingelectrically connected to a respective one of a plurality of voltagesupply lines through a via extending through the first planarizationlayer; a second planarization layer on a side of the first data line andthe balancing block away from the first planarization layer; a firstanode of a first light emitting element on a side of the secondplanarization layer away from the first planarization layer; and a pixeldefinition layer on a side of the first anode away from the secondplanarization layer, and defining a respective first subpixel aperture;wherein an orthographic projection of the first anode on a basesubstrate at least partially overlaps with an orthographic projection ofthe balancing block on the base substrate and at least partiallyoverlaps with an orthographic projection of the first data line on thebase substrate.
 12. The array substrate of claim 11, wherein, along thefirst direction, orthographic projections of the first data line and thebalancing block on the base substrate are respectively on two oppositesides of an orthographic projection of the respective first subpixelaperture on the base substrate; and the orthographic projection of therespective first subpixel aperture on the base substrate isnon-overlapping with the orthographic projection of the first data lineon the base substrate, and is also non-overlapping with the orthographicprojection of the balancing block on the base substrate.
 13. The arraysubstrate of claim 11, wherein the first anode comprises a main portionand a protrusion protruding along a first direction from a side of themain portion; an orthographic projection of the protrusion on the basesubstrate at least partially overlaps with an orthographic projection ofa semiconductor material portion of a third transistor on the basesubstrate, the semiconductor material portion extending along the firstdirection; an orthographic projection of the main portion on the basesubstrate at least partially overlaps with the orthographic projectionof the first data line on the base substrate, and also at leastpartially overlaps with the orthographic projection of the balancingblock on the base substrate; and an orthographic projection of theprotrusion on the base substrate at least partially overlaps with theorthographic projection of the balancing block on the base substrate.14. The array substrate of claim 1, comprising: a base substrate; aplurality of data lines; a plurality of light emitting elementsrespectively in a plurality of subpixels; and a pixel definition layeron the base substrate, the pixel definition layer defining a pluralityof subpixel apertures; wherein the plurality of light emitting elementscomprise a first light emitting element in a respective first subpixel,a second light emitting element in a respective second subpixel, a thirdlight emitting element in a respective third subpixel, and a fourthlight emitting element in a respective fourth subpixel; the plurality ofsubpixel apertures comprise a respective first subpixel aperture, arespective second subpixel aperture, a respective third subpixelaperture, a respective fourth subpixel aperture respectively extendingthrough the pixel definition layer; a first light emitting layer of thefirst light emitting element is connected to a first anode of the firstlight emitting element through the respective first subpixel aperture; asecond light emitting layer of the second light emitting element isconnected to a second anode of the second light emitting element throughthe respective second subpixel aperture; a third light emitting layer ofthe third light emitting element is connected to a third anode of thethird light emitting element through the respective third subpixelaperture; a fourth light emitting layer of the fourth light emittingelement is connected to a fourth anode of the fourth light emittingelement through the respective fourth subpixel aperture; each of therespective first subpixel aperture, the respective second subpixelaperture, and the respective fourth subpixel aperture is not crossedover by any data line; and the respective third subpixel aperture iscrossed over by one of the plurality of data lines.
 15. The arraysubstrate of claim 14, wherein the plurality of subpixel aperturescomprise a plurality of minimum repeating units, a respective one of theplurality of minimum repeating units comprising the respective firstsubpixel aperture, the respective second subpixel aperture, therespective third subpixel aperture, and the respective fourth subpixelaperture; the plurality of data lines comprise a plurality of repeatinggroups of data lines, a respective group of the plurality of repeatinggroups of data lines comprising a first data line, a second data line, athird data line, and a fourth data line consecutively arranged, andrespectively configured to provide data signals respectively to therespective first subpixel, the respective second subpixel, therespective third subpixel, and the respective fourth subpixel; and thefourth data line crosses over the respective third subpixel aperture.16. The array substrate of claim 15, wherein the respective firstsubpixel aperture, the respective second subpixel aperture, therespective third subpixel aperture, and the respective fourth subpixelaperture in the respective one of the plurality of minimum repeatingunits are consecutively arranged along a row; the first data line, thesecond data line, the third data line, and the fourth data line areconsecutively arranged along the row; the respective first subpixelaperture is between the first data line and the second data line; therespective second subpixel aperture is between the second data line andthe third data line; the respective third subpixel aperture is crossedover by the fourth data line; and the respective fourth subpixelaperture is on a side of the fourth data line away from the third dataline.
 17. The array substrate of claim 16, wherein the respective firstsubpixel aperture, the respective second subpixel aperture, therespective third subpixel aperture, and the respective fourth subpixelaperture are in a first minimum repeating unit in a first row of twonearest adjacent rows; a second minimum repeating unit in a second rowof the two nearest adjacent rows, along a first direction, has adisplacement of twice of an inter-data line distance with respect to thefirst minimum repeating unit, the inter-data line distance being ashortest distance between two nearest data lines along the firstdirection; the second minimum repeating unit in the second row comprisesa second respective first subpixel aperture, a second respective secondsubpixel aperture, a second respective third subpixel aperture, and asecond respective fourth subpixel aperture consecutively arranged alongthe row; and the second data line crosses over the second respectivesecond subpixel aperture in the second row.
 18. The array substrate ofclaim 15, wherein a first plane containing an orthographic projection ofthe fourth data line on a second plane containing a surface of the pixeldefinition layer divides the respective third subpixel aperture into afirst region and a second region, the first plane orthogonal to thesecond plane; and a ratio of a first area of the first region to asecond area of the second region is in a range of 2:8 to 8:2. 19-41.(canceled)
 42. A display apparatus, comprising the array substrate ofclaim 1, and an integrated circuit connected to the array substrate.